IP Library Granted Patent US 7,203,001
Granted Patent B2
US 7,203,001 · App. 10/918,299 · Granted Apr 10, 2007

Optical retarders and related devices and systems

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Quick Facts
Patent No.
US 7,203,001
App. No.
10/918,299
Granted
Apr 10, 2007
Kind
B2
Abstract

In certain aspects, the disclosure relates to articles that include a plurality of walls configured to form a grating. Each of the plurality of walls can include a layer of a first material and a layer of a second material different from the first material. The articles can retard incident radiation at wavelengths λ 1 and λ 2 by amounts Γ 1 and Γ 2 , respectively, where |λ 1 −λ 2 | is about 15 nm or more and Γ 1 is substantially equal to Γ 2 .

Claims (28)

1. An article, comprising:

a plurality of walls configured to form a grating, each of the plurality of walls comprising:

a layer of a first material;

a layer of a second material different from the first material; and

a layer of a third material different from the first material,

wherein the layer of the third material of each wall is positioned between the layer of the first material of that wall and the layer of the first material of an adjacent wall, the layer of the third material is spaced apart from the layer of the first material of the adjacent wall, and the article is birefringent at wavelengths λ 1 and λ 2 and retards incident radiation at λ 1 and λ 2 by amounts Γ 1 and Γ 2 , respectively, where |λ 1 −λ 2 | is about 15 nm or more and Γ 1 is substantially equal to Γ 2 .

2. The article of claim 1 , wherein each wall further comprises a layer of a fourth material disposed on the layer of the second material, wherein the fourth material and the second materials are different.

3. The article of claim 2 , wherein the fourth material is different from the first material.

4. The article of claim 2 , wherein the fourth material is a dielectric material.

5. The article of claim 2 , wherein the fourth material comprises a material selected from the group consisting of SiN x :H z , SiO x N y :H z , Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 , TaNb x O y , TiNb x O y , HfO 2 , TiO 2 , SiO 2 , ZnO, LiNbO 3 , a-Si, Si, ZnSe, and ZnS, where x, y, and z are real numbers.

6. The article of claim 2 , wherein each wall further comprises one or more additional layers disposed on the layer of the fourth material.

7. The article of claim 1 , further comprising a substantially continuous layer of a fourth material disposed on the layer of the second material in each wall.

8. The article of claim 7 , further comprising a substantially continuous layer deposited on the layer of the fourth material.

9. The article of claim 7 , wherein the fourth material is different from the first material.

10. The article of claim 7 , wherein the fourth material is a dielectric material.

11. The article of claim 7 , wherein the fourth material comprises a material selected from the group consisting of SiN x :H z , SiO x N y :H z , Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 , TaNb x O y , TiNb x O y , HfO 2 , TiO 2 , SiO 2 , ZnO, LiNbO 3 , a-Si, Si, ZnSe, and ZnS, where x, y, and z are real numbers.

12. The article of claim 1 , wherein the third material is different from the second material.

13. The article of claim 1 , wherein each wall further comprises a second layer of the third material disposed on the layer of the second material, the second layer of the third material being contiguous with the layer of the third material positioned between the layer of the first material of that wall and the layer of the first material of the adjacent wall.

14. The article of claim 1 , wherein each wall further comprises a second layer of the third material, wherein the layer of the first material of each wall is positioned between the two layers of the third material.

15. The article of claim 1 , wherein the article comprises a film of the third material that conforms to the first and second layer of each wall and the layer of the third material of each wall is a portion of the film.

16. The article of claim 1 , wherein the third material is a dielectric material.

17. The article of claim 1 , wherein each wall further comprises a layer of a fourth material positioned between the layer of the third material of that wall and the layer of the first material of an adjacent wall.

18. An article, comprising:

a plurality of walls configured to form a grating, each of the plurality of walls comprising:

a layer of a first material;

a layer of a second material different from the first material; and

a layer of a third material different from the first material,

wherein the layer of the third material of each wall is positioned between the layer of the first material of that wall and the layer of the first material of an adjacent wall, the layer of the third material is spaced apart from the layer of the first material of the adjacent wall, and the article retards a phase between orthogonal polarization states of incident radiation at wavelengths λ 1 and λ 2 by amounts Γ 1 and Γ 2 , respectively, where |λ 1 −λ 2 | is about 15 nm or more and λ 1 Γ 1 substantially equal to Γ 2 .

Assignments (13)
RELEASE OF SECURITY INTEREST Recorded Nov 3, 2023
From: CANTOR FITZGERALD SECURITIES
To: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; API/INMET, INC.; SPECTRUM MICROWAVE, INC.; RF1 HOLDING COMPANY
Reel/Frame 065456/0050 →
SECURITY INTEREST Recorded Nov 3, 2023
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.
To: API HOLDINGS I CORP. AS COLLATERAL AGENT
Reel/Frame 065457/0129 →
RELEASE OF SECURITY INTEREST Recorded May 9, 2019
From: ANTARES CAPITAL LP
To: API TECHNOLOGIES, CORP; SPECTRUM CONTROL, INC.; SPECTRUM MICROWAVE, INC.
Reel/Frame 049132/0139 →
SECURITY INTEREST Recorded May 9, 2019
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; API / WEINSCHEL, INC.; API / INMET, INC.; API CRYPTEK INC.; SPECTRUM MICROWAVE, INC.
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 049132/0758 →
SECURITY INTEREST Recorded May 9, 2019
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; API / INMET, INC.; API / WEINSCHEL, INC.; API CRYPTEK INC.; SPECTRUM MICROWAVE, INC.
To: CANTOR FITZGERALD SECURITIES, AS NOTEHOLDER REPRESENTATIVE
Reel/Frame 049132/0823 →
SECURITY INTEREST Recorded Apr 20, 2018
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; SPECTRUM MICROWAVE, INC.
To: ANTARES CAPITAL LP, AS AGENT
Reel/Frame 045595/0601 →
RELEASE OF SECURITY INTEREST Recorded Apr 20, 2018
From: BNP PARIBAS, AS COLLATERAL AGENT
To: API TECHNOLOGIES CORP.
Reel/Frame 045604/0054 →
SECURITY INTEREST Recorded Apr 22, 2016
From: API TECHNOLOGIES CORP.; SPECTRUM CONTROL, INC.; SPECTRUM MICROWAVE, INC.; API DEFENSE, INC.
To: BNP PARIBAS, AS COLLATERAL AGENT
Reel/Frame 038351/0207 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2013
From: NANTOPTICS LLC
To: API TECHNOLOGIES CORP.
Reel/Frame 030894/0291 →
CHANGE OF NAME Recorded Apr 29, 2013
From: ABRAXIS BIOSENSORS, LLC
To: NANTOPTICS, LLC
Reel/Frame 030312/0591 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2010
From: API NANOFABRICATION AND RESEARCH CORPORATION
To: ABRAXIS BIOSENSORS, LLC
Reel/Frame 024964/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2008
From: NANOOPTO CORPORATION
To: API NANOFABRICATION AND RESEARCH CORP.
Reel/Frame 021531/0594 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2007
From: NANOOPTO CORPORATION
To: API NANOFABRICATION AND RESEARCH CORPORATION
Reel/Frame 019617/0843 →