Semiconductor device and method of manufacturing same
View Patent ↗The present invention provides a semiconductor device which do not form parasitic transistors in device isolation regions and is capable of narrowing device-to-device intervals, and a method of manufacturing the semiconductor device. The method includes a step for anisotropically etching spots that serve as active regions of a sapphire substrate and causing their ends to become substantially normal to the surface of the sapphire substrate, a step for forming a silicon layer so as to be thicker than an etching depth, a step for implanting silicon ions to amorphize the silicon layer, a step for performing annealing and thereby recrystallizing the amorphized silicon layer, and a step for planarizing the recrystallized silicon layer until the sapphire substrate is exposed, thereby to leave the silicon layer that serves as each of the active regions, whereby device-to-device isolation regions can be formed normal to the sapphire substrate.
1. A semiconductor device, comprising:
a sapphire substrate;
silicon regions each formed into an etched area on an exposed surface of the sapphire substrate, whereby sapphire isolation regions surround each of the silicon regions and electrically isolate the silicon device regions from each other, and wherein side faces of the silicon regions are substantially normal to the exposed surface of the sapphire substrate; and
active devices formed on exposed outer surfaces of the silicon regions adjacent to the exposed surface of the sapphire substrate.
2. The semiconductor device according to claim 1 , wherein the exposed outer surface of each of the silicon regions is recessed below the exposed surface of the sapphire substrate.
3. A method of manufacturing a semiconductor device using a sapphire substrate, comprising the following steps of:
selectively etching regions corresponding to device regions of the sapphire substrate such that their side faces are substantially vertical;
forming a silicon layer over the whole surface of the sapphire substrate so as to become thicker than an etching depth of the sapphire substrate;
implanting silicon ions into the silicon layer to amorphize the silicon layer;
performing annealing to thereby recrystallize the amorphized silicon layer; and
planarizing the recrystallized silicon layer until the sapphire substrate is exposed, thereby to leave the silicon layer in the etching regions of the sapphire substrate.
4. The method according to claim 3 , wherein the depth of etching of the sapphire substrate is formed in substantially the same manner as a desired thickness of said each device region.
5. The method according to claim 3 , further comprising steps of, after the planarization of the recrystallized silicon layer:
annealing the sapphire substrate and forming thermal oxide films on the silicon layer and the sapphire substrate on which residuals of the silicon layer exist; and
removing the thermal oxide films.
6. The method according to claim 5 , wherein the thickness of the thermal oxide film on the silicon layer is a thickness equivalent to approximately 1/100 to ½ times the thickness of the planarized silicon layer.