Device and method for emitting output light using Group IIB element Selenide-based phosphor material
A device and method for emitting output light utilizes Group IIB element Selenide-based phosphor material to convert at least some of the original light emitted from a light source of the device to a longer wavelength light to change the optical spectrum of the output light. Thus, the device and method can be used to produce white color light. The Group IIB element Selenide-based phosphor material is included in a wavelength-shifting region optically coupled to the light source, which may be a blue-green light emitting diode (LED) die.
1 . A device for emitting output light, said device comprising:
a light source that emits first light of a first peak wavelength in the visible wavelength range; and
a wavelength-shifting region optically coupled to said light source to receive said first light, said wavelength-shifting region including Group IIB element Selenide-based phosphor material having a property to convert at least some of said first light to second light of a second peak wavelength, said second light being a component of said output light.
2 . The device of claim 1 wherein said Group IIB element Selenide-based phosphor material of said wavelength-shifting region is doped with at least one rare earth element.
3 . The device of claim 1 wherein said Group IIB element Selenide-based phosphor material of said wavelength-shifting region includes phosphor particles.
4 . The device of claim 3 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have a silica coating.
5 . The device of claim 3 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have particle size of less than or equal to 30 microns.
6 . The device of claim 1 wherein said Group IIB element Selenide-based phosphor material of said wavelength-shifting region includes Zinc Selenide.
7 . The device of claim 1 wherein said Group IIB element Selenide-based phosphor material of said wavelength-shifting region includes Cadmium Selenide.
8 . A device for emitting output light, said device comprising:
a semiconductor die that emits first light of a first peak wavelength in the visible wavelength range; and
a phosphor-containing medium positioned to receive said first light, said phosphor-containing medium including Group IIB element Selenide-based phosphor material having a property to convert at least some of said first light to second light of a second peak wavelength, said second light being a component of said output light.
9 . The device of claim 8 wherein said Group IIB element Selenide-based phosphor material of said phosphor-containing region is doped with at least one rare earth element.
10 . The device of claim 8 wherein said Group IIB element Selenide-based phosphor material of said phosphor-containing region includes phosphor particles.
11 . The device of claim 10 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have a silica coating.
12 . The device of claim 10 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have particle size of less than or equal to 30 microns.
13 . The device of claim 8 wherein said Group IIB element Selenide-based phosphor material of said phosphor-containing region includes Zinc Selenide.
14 . The device of claim 8 wherein said Group IIB element Selenide-based phosphor material of said phosphor-containing region includes Cadmium Selenide.
15 . A method for emitting output light, said method comprising:
generating first light of a first peak wavelength in the visible wavelength range;
receiving said first light, including converting at least some of said first light to second light of a second peak wavelength using Group IIB element Selenide-based phosphor material; and
emitting said second light as a component of said output light.
16 . The method of claim 15 wherein said Group IIB element Selenide-based phosphor material is doped with at least one rare earth element.
17 . The method of claim 15 wherein said Group IIB element Selenide-based phosphor material includes phosphor particles.
18 . The method of claim 17 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have a silica coating.
19 . The method of claim 17 wherein said phosphor particles of said Group IIB element Selenide-based phosphor material have particle size of less than or equal to 30 microns.
20 . The method of claim 15 wherein said Group IIB element Selenide-based phosphor material includes one of Zinc Selenide and Cadmium Selenide.