Heating resistor type flow-measuring device having a heating resistor and a thermoresistance, whose resistance value varies in response to the ambient temperature
View Patent ↗A heating resistor type flow-measuring device is capable of adjusting heating temperature of a heating resistor according to the ambient temperature as well as making the initial adjustment. A heating resistor, a thermoresistance, a group of the resistors, and an amplifier constitute a bridge circuit, and leading terminals of the group of resistors are connected to one of input terminals of an amplifier for amplifying an error voltage through MOS transistors. The heating temperature of the heating resistor can be changed by selecting one of the MOS transistors and turning it on.
1. A heating resistor type flow-measuring device that comprises a heating resistor for generating heat by a current flowing in it and a thermoresistance whose resistance value varies in response to the ambient temperature, and is for measuring the flow rate of a gas using heating of the heating resistor, wherein
a series connection circuit is formed with the heating resistor and the thermoresistance,
the heating resistor type flow-measuring device further comprising:
a plurality of resistors connected to the series connection circuit in parallel; and
at least two leading terminals connected to resistive connection points of the plurality of resistors.
2. A heating resistor type flow-measuring device that comprises a heating resistor for generating heat by a current flowing in it and a thermoresistance whose resistance value varies in response to the ambient temperature, and is for measuring the flow rate of a gas using heating of the heating resistor, wherein
a series connection circuit is formed with the heating resistor and the thermoresistance,
the heating resistor type flow-measuring device further comprising a plurality of resistors that are arranged outside the planar substrate and are connected to the series connection circuit in parallel.
3. The heating resistor type flow-measuring device according to claim 2 , further comprising
at least two leading terminals connected to resistive connection points of the plurality of resistors that are connected to the series connection circuit in parallel.
4. The heating resistor type flow-measuring device according to claim 2 , wherein
the planar substrate is a silicon substrate.
5. The heating resistor type flow-measuring device according to claim 1 , further comprising:
current adjusting means that inputs a first potential at a midpoint of connection between the heating resistor and the thermoresistance and a second potential at one of resistive junction points of the plurality of resistors, compares the first potential and the second potential, and controls a current flowing in the heating resistor; and
switches that select any one of potentials of at least two leading terminals connected to resistive connection points of the resistors as an input signal to the current adjusting means.
6. The heating resistor type flow-measuring device according to claim 5 , wherein
the switches are MOS transistors.
7. The heating resistor type flow-measuring device according to claim 6 , wherein
the plurality of resistors connected to the series connection circuit in parallel are arranged on the same semiconductor chip on which the MOS transistors are arranged.
8. The heating resistor type flow-measuring device according to claim 3 , further comprising:
current adjusting means that inputs a first potential at a midpoint of connection between the heating resistor and the thermoresistance and a second potential at one of resistive junction points of the plurality of resistors, compares the first potential and the second potential, and controls a current flowing in the heating resistor; and
switches that select any one of potentials of at least two leading terminals connected to resistive connection points of the resistors as an input signal to the current adjusting means.
9. The heating resistor type flow-measuring device according to claim 8 , wherein
the switches are MOS transistors.