Image sensor having integrated thin film infrared filter
An image sensor is disclosed. The image sensor includes a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element. Further, a multilayer stack is formed over the pixels, the multilayer stack adapted to filter incident light in the infrared region. Finally, micro-lenses are formed over the multilayer stack and over the light sensitive element.
1. An image sensor comprising:
a plurality of pixels formed in a semiconductor substrate, each pixel including a light sensitive element;
a multilayer stack formed over said plurality of pixels, said multilayer stack adapted to filter incident light in the infrared region, wherein said multilayer stack comprises an interlayer of carbon;
a plurality of micro-lenses formed over said multilayer stack and over said light sensitive element.
2. The image sensor of claim 1 further including a color filter formed over each pixel, said color filter formed between said micro-lens and said multilayer stack.
3. The image sensor of claim 1 further including a color filter formed over each pixel, said color filter formed over said micro-lens.
4. A pixel of an image sensor comprising:
a light sensitive element formed in a semiconductor substrate;
a multilayer stack formed over light sensitive element, said multilayer stack adapted to filter incident light in the infrared region, wherein said multilayer stack comprises an interlayer of carbon;
a micro-lens formed over said multilayer stack and over said light sensitive element.
5. The pixel of claim 4 further including a color filter formed between said micro-lens and said multilayer stack.
6. The pixel of claim 4 further including a color filter formed over said micro-lens.