Systems and methods for implementing delay line circuitry

1. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device; and

wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

2. The delay line circuitry of claim 1 , wherein said delay element control circuitry comprises said at least one memory device.

3. The delay line circuitry of claim 2 , wherein said at least one memory device comprises a FLASH memory device.

4. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device;

wherein said delay element control circuitry comprises said at least one memory device; and

wherein said delay element control circuitry is further configured to receive a control signal comprising control information that is at least partially indicative of a desired signal delay to be imparted to said input signal by said delay line circuitry, and to determine a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay.

5. The delay line circuitry of claim 4 , wherein said delay element control circuitry is further configured to receive a control signal comprising control information that is at least partially indicative of a frequency of said input signal, and wherein said delay element control circuitry is further configured to determine a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay and based at least in part on said control information that is at least partially indicative of a frequency of said input signal.

6. The delay line circuitry of claim 5 , wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

7. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device; and

wherein said delay element setting information is at least partially derived by measurement of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

8. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device; and

wherein said delay element setting information is at least partially derived by automated measurement and storage into said at least one memory device of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

9. The delay line circuitry of claim 8 , further comprising integral test circuitry configured to derive said delay element setting information and to provide said delay element setting information for storage in said at least one memory device.

10. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal, said delay element control circuitry comprising at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device; and

wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

11. The delay line circuitry of claim 10 , wherein said at least one memory device comprises a FLASH memory device.

12. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal, said delay element control circuitry comprising at least one memory device;

wherein said at least one memory device comprises a non-volatile memory device;

wherein said at least one memory device is configured to store delay element setting information; and wherein said delay element setting information is at least partially derived by measurement of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

13. The delay line circuitry of claim 12 , wherein said at least one memory device is configured to store delay element setting information; and wherein said delay element setting information is at least partially derived by automated measurement and storage into said at least one memory device of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

14. The delay line circuitry of claim 12 , further comprising integral test circuitry configured to derive said delay element setting information by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry, and to provide said delay element setting information for storage in said at least one memory device.

15. The delay line circuitry of claim 13 , wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

16. A phased array apparatus, comprising:

a plurality of array elements; and

a plurality of phase shifting devices, each of said plurality of phase shifting devices being coupled to a respective one of said plurality of array elements;

wherein each of said plurality of phase shifting devices comprises a plurality of delay elements, and delay element control circuitry configured to control said plurality of delay elements based at least in part on delay element setting information provided by at least one memory device.

17. The phased array apparatus of claim 16 , wherein said delay element control circuitry of each of said respective plurality of phase shifting devices comprises at least one memory device configured to provide said delay element setting information to said respective phase shifting device.

18. The phased array apparatus of claim 17 , wherein said at least one memory device of each of said respective plurality of phase shifting devices comprises a FLASH memory device.

19. The phased array apparatus of claim 16 , wherein said delay element control circuitry of each of said respective plurality of phase shifting devices comprises at least one memory device and is configured to receive a control signal comprising control information that is at least partially indicative of a desired phase shift to be imparted to an input signal by said phase shift device; and wherein said delay element control circuitry of each of said respective phase shifting devices is configured to determine a delay bit selection for said plurality of delay elements of said respective phase shifting device using said delay element setting information provided by said at least one memory device of said respective phase shift device and based at least in part on said control information that is at least partially indicative of said desired phase shift to be imparted to said input signal by said respective phase shift device.

20. The phased array apparatus of claim 19 , wherein said delay element control circuitry of each of said respective plurality of phase shifting devices is configured to receive a control signal comprising control information that is at least partially indicative of a frequency of said input signal to said respective phase shift device; and wherein said delay element control circuitry of each of said respective phase shifting devices is configured to determine a delay bit selection for said plurality of delay elements of said respective phase shifting device using said delay element setting information provided by said at least one memory device of said respective phase shift device and based at least in part on said control information that is at least partially indicative of said desired phase shift to be imparted to said input signal by said respective phase shift device and based at least in part on said control information that is at least partially indicative of a frequency of said input signal to said respective phase shift device.

21. The phased array apparatus of claim 16 , wherein said phased array apparatus comprises a radio frequency (RF) antenna; wherein each of said delay elements is configured to receive and delay an input signal to produce a delayed output signal; and wherein said input signal to each of said delay elements comprises a radio frequency (RF) signal.

22. The phased array apparatus of claim 16 , wherein said delay element setting information comprises a look-up table of delay bit selection values for said plurality of delay elements.

23. The phased array apparatus of claim 16 , wherein said delay element setting information for each of said respective phase shifting devices is at least partially derived by measurement of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said respective phase shifting device.

24. The phased array apparatus of claim 16 , wherein said delay element setting information for each of said respective phase shifting devices is at least partially derived by automated measurement and storage into said at least one memory device of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said respective phase shifting device.

25. The phased array apparatus of claim 16 , wherein said at least one memory device of each of said respective plurality of phase shifting devices comprises a non-volatile memory device.

26. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; wherein said at least one memory device comprises a non-volatile memory device; wherein said input signal comprises a radio frequency (RF) signal; and wherein said method further comprises delaying said RF input signal to produce a delayed RF output signal having a phase that is shifted relative to a phase of said RF input signal.

27. The method of claim 26 , wherein said at least one memory device comprises a FLASH memory device.

28. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; wherein said at least one memory device comprises a non-volatile memory device; and further comprising deriving said delay element setting information at least partially by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements; and storing said delay element setting information in said at least one memory device.

29. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; wherein said at least one memory device comprises a non-volatile memory device; and further comprising deriving said delay element setting information at least partially by automatically measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements; and automatically storing said delay element setting information in said at least one memory device.

30. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; wherein said at least one memory device comprises a non-volatile memory device; wherein said delay element setting information comprises two or more delay bit selection values for said plurality of delay elements; and wherein said method further comprises deriving said delay bit selection values by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements between said input signal and said delayed output signal, and storing said delay bit selection values in said at least one memory device.

31. The method of claim 30 , further comprising receiving a control signal comprising control information that is at least partially indicative of a desired signal delay to be imparted to said input signal by said delay line circuitry; and determining a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay.

32. The method of claim 31 , further comprising receiving a control signal comprising control information that is at least partially indicative of a frequency of said input signal; and determining a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay and based at least in part on said control information that is at least partially indicative of a frequency of said input signal.

33. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; wherein said at least one memory device comprises a non-volatile memory device; wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

34. A method of operating a phased array apparatus, comprising:

providing a plurality of array elements; and

providing a plurality of phase shifting devices, each of said plurality of phase shifting devices comprising a plurality of delay elements and being coupled to a respective one of said plurality of array elements;

varying the phase of a signal transmitted or received by each respective one of said array elements by controlling said plurality of delay elements of said respective phase shifting device coupled to said respective array element based at least in part on delay element setting information provided by at least one memory device.

35. The method of claim 34 , wherein each of said plurality of phase shifting devices further comprises at least one memory device configured to provide said delay element setting information to said respective phase shifting device.

36. The method of claim 35 , wherein said at least one memory device of each of said respective plurality of phase shifting devices comprises a FLASH memory device.

37. The method of claim 34 , further comprising deriving said delay element setting information for each of said respective phase shifting devices at least partially by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said respective phase shifting device; and storing said delay element setting information in said at least one memory device.

38. The method of claim 34 , further comprising deriving said delay element setting information for each of said respective phase shifting devices at least partially by automatically measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said respective phase shifting device; and automatically storing said delay element setting information in said at least one memory device.

39. The method of claim 34 , wherein said delay element setting information comprises two or more delay bit selection values for said plurality of delay elements of each of said respective phase shifting devices; and wherein said method further comprises deriving said delay bit selection values by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of each of said respective phase shifting devices, and storing said delay bit selection values in said at least one memory device.

40. The method of claim 39 , further comprising receiving a control signal comprising control information that is at least partially indicative of a desired phase shift to be imparted to an input signal by at least one of said respective phase shift devices; and determining a delay bit selection for said plurality of delay elements of said respective phase shifting device using said delay element setting information provided by said at least one memory device and based at least in part on said control information that is at least partially indicative of said desired phase shift to be imparted to said input signal by said respective phase shift device.

41. The method of claim 40 , further comprising receiving a control signal comprising control information that is at least partially indicative of a frequency of said input signal to said respective phase shift device; and determining a delay bit selection for said plurality of delay elements of said respective phase shifting device using said delay element setting information provided by said at least one memory device and based at least in part on said control information that is at least partially indicative of said desired phase shift to be imparted to said input signal by said respective phase shift device and based at least in part on said control information that is at least partially indicative of a frequency of said input signal to said respective phase shift device.

42. The method of claim 34 , wherein said phased array apparatus comprises a radio frequency (RF) antenna; wherein each of said delay elements is configured to receive and delay an input signal to produce a delayed output signal; and wherein said input signal to each of said delay elements comprises a radio frequency (RF) signal.

43. The method of claim 34 , wherein said delay element setting information comprises a look-up table of delay bit selection values for said plurality of delay elements.

44. The method of claim 34 , wherein said at least one memory device of each of said respective plurality of phase shifting devices comprises a non-volatile memory device.

45. Test circuitry configured for coupling to delay line circuitry that has a plurality of delay elements and that has delay element control circuitry configured to control said plurality of delay elements to produce a delayed output signal based at least in part on delay element setting information provided by at least one memory device, said test circuitry comprising:

circuitry configured to derive said delay element setting information for storage in said memory device;

wherein said at least one memory device comprises a non-volatile memory device;

wherein said test circuitry comprises circuitry external to said delay line circuitry; and

wherein said external circuitry of said test circuitry is further configured to derive said delay element setting information by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry, and to provide said delay element setting information for storage in said at least one memory device.

46. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said delay element setting information is at least partially derived by measurement of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

47. The delay line circuitry of claim 46 , wherein said delay element setting information is at least partially derived by automated measurement and storage into said at least one memory device of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

48. The delay line circuitry of claim 47 , further comprising integral test circuitry configured to derive said delay element setting information and to provide said delay element setting information for storage in said at least one memory device.

49. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device;

wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

50. The delay line circuitry of claim 49 , wherein said delay element control circuitry comprises said at least one memory device; wherein said delay element control circuitry is further configured to receive a control signal comprising control information that is at least partially indicative of a desired signal delay to be imparted to said input signal by said delay line circuitry, and to determine a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay; and wherein said delay element control circuitry is further configured to receive a control signal comprising control information that is at least partially indicative of a frequency of said input signal, and wherein said delay element control circuitry is further configured to determine a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay and based at least in part on said control information that is at least partially indicative of a frequency of said input signal.

51. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal, said delay element control circuitry comprising at least one memory device;

wherein said at least one memory device is configured to store delay element setting information; and wherein said delay element setting information is at least partially derived by measurement of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

52. The delay line circuitry of claim 51 , wherein said at least one memory device is configured to store delay element setting information; and wherein said delay element setting information is at least partially derived by automated measurement and storage into said at least one memory device of actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry.

53. The delay line circuitry of claim 52 , wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

54. The delay line circuitry of claim 51 , further comprising integral test circuitry configured to derive said delay element setting information by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry, and to provide said delay element setting information for storage in said at least one memory device.

55. Delay line circuitry configured to receive and delay an input signal to produce a delayed output signal, said delay line circuitry comprising:

a plurality of delay elements; and

delay element control circuitry configured to control said plurality of delay elements to produce said delayed output signal, said delay element control circuitry comprising at least one memory device;

wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

56. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; and further comprising deriving said delay element setting information at least partially by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements; and storing said delay element setting information in said at least one memory device.

57. The method of claim 56 , further comprising deriving said delay element setting information at least partially by automatically measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements; and automatically storing said delay element setting information in said at least one memory device.

58. The method of claim 56 , wherein said delay element setting information comprises two or more delay bit selection values for said plurality of delay elements; and wherein said method further comprises deriving said delay bit selection values by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements between said input signal and said delayed output signal, and storing said delay bit selection values in said at least one memory device.

59. The method of claim 58 , further comprising receiving a control signal comprising control information that is at least partially indicative of a desired signal delay to be imparted to said input signal by said delay line circuitry; and determining a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay.

60. The method of claim 59 , further comprising receiving a control signal comprising control information that is at least partially indicative of a frequency of said input signal; and determining a delay bit selection for said plurality of delay elements using said delay element setting information and based at least in part on said control information that is at least partially indicative of a desired signal delay and based at least in part on said control information that is at least partially indicative of a frequency of said input signal.

61. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; and wherein said delay line circuitry comprises a phase shifting device, and wherein said input signal comprises a radio frequency (RF) signal.

62. A method of delaying an input signal to produce a delayed output signal using a plurality of delay elements coupled to receive and delay said input signal to produce said delayed output signal, said method comprising controlling said plurality of delay elements to produce said delayed output signal based at least in part on delay element setting information provided by at least one memory device; and wherein said input signal comprises a radio frequency (RF) signal; and wherein said method further comprises delaying said RF input signal to produce a delayed RF output signal having a phase that is shifted relative to a phase of said RF input signal.

63. Test circuitry configured for coupling to delay line circuitry that has a plurality of delay elements and that has delay element control circuitry configured to control said plurality of delay elements to produce a delayed output signal based at least in part on delay element setting information provided by at least one memory device, said test circuitry comprising:

circuitry configured to derive said delay element setting information for storage in said memory device;

wherein said test circuitry comprises circuitry external to said delay line circuitry; and

wherein said external circuitry of said test circuitry is further configured to derive said delay element setting information by measuring actual signal delay values through two or more combinations of signal paths through said plurality of delay elements of said delay line circuitry, and to provide said delay element setting information for storage in said at least one memory device.