LCD device including a TFT for reducing leakage current
View Patent ↗An amorphous-silicon TFT (thin-film-transistor) in an LCD device has a larger channel length at both the edge portions of the channel of the TFT compared to the central portion of the channel by forming chamfers at the corners of the source and drain electrodes. The larger channel length at both the edge portions reduces the leakage current caused by the turned-around light incident onto the channel.
1. A liquid crystal display (LCD) device comprising a TFT (thin-film-transistor) substrate mounting thereon a plurality of TFTs each having a channel in an ohmic contact layer and a semiconductor layer;
a counter substrate mounting thereon a black matrix;
a liquid crystal layer sandwiched between said TFT substrate and said counter substrate;
a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, said counter substrate mounting thereon a light shield overlapping said channel of said TFTs as view normal to said counter substrate; and
a rear shield film interposed between said channel of said TFTs and said backlight unit to overlap said channel of said TFTs s viewed normal to said TFT substrate,
said channel having a channel length larger at an edge portion of said channel adjacent to one of said pixels than at a central portion thereof, whereupon leakage current of said TFT at said edge portion is suppressed.
2. The LCD device according to claim 1 , wherein said channel length is larger at both edge portions of said channel than at said central portion thereof.
3. The LCD device according to claim 1 , wherein said TFT includes a gate electrode disposed between said channel and said backlight unit; said gate electrode having a function of shielding said channel against said backlight.
4. The LCD device according to claim 1 , wherein said semiconductor layer is made of an amorphous silicon film or a polysilicon film.
5. The LCD device according to claim 1 , wherein said TFT includes source and drain electrodes opposing said gate electrode with an intervention of said semiconductor layer.
6. The LCD device according to claim 1 , wherein said ohmic contact layer is between said semiconductor layer and said source and drain electrodes.
7. The LCD device according to claim 1 , wherein said source and drain electrodes of said TFT overlie said semiconductor layer.
8. The LCD device according to claim 1 , wherein said channel length monotonically decreases from said edge portions to said central portion.
9. A liquid crystal display (LCD) device comprising a TFT (thin-film-transistor) substrate mounting thereon a plurality of TFTs, a counter substrate mounting thereon a black matrix, a liquid crystal layer sandwiched between said TFT substrate and said counter substrate for defining an array of pixels, and a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, each of said TFTs having a channel in an ohmic contact layer and a semiconductor layer, said channel being aligned, as viewed normal to said substrates, with said black matrix and a light shield layer disposed between said channel and said backlight unit,
said channel having a channel length larger at an edge portion of said channel adjacent to one of said pixels than at a central portion thereof.
10. The LCD device according to claim 9 , wherein said light shield layer is a gate electrode of said TFT.
11. The LCD device according to claim 9 , wherein said TFTs each have source and drain regions having edges asymmetric to each other with respect to said channel.
12. The LCD device according to claim 9 , wherein said channel has a curved portion wherein said channel length monotonically increases from said central portion to both said edge portions.
13. A liquid crystal display (LCD) device comprising a thin-film-transistor (TFT) substrate mounting thereon a plurality of TFTs, a counter substrate mounting thereon a black matrix, a liquid crystal layer sandwiched between said TFT substrate and said counter substrate for defining an array of pixels, each of said pixels including one of said TFTs and an associated pixel electrode, and a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, each of said TFTs having a channel in an ohmic contact layer and a semiconductor layer, said channel being aligned, as viewed normal to said substrates, with said black matrix and a light shield layer disposed between said channel and said backlight unit,
said channel having a channel length larger at both edge portions of said channel than at a central portion thereof.
14. The LCD device according to claim 13 , wherein said channel has a curved portion wherein said channel length monotonically increases from said central portion to both said edge portions.
15. A liquid crystal display (LCD) device comprising a TFT (thin-film-transistor) substrate mounting thereon a plurality of TFTs, a counter substrate mounting thereon a black matrix, a liquid crystal layer sandwiched between said TFT substrate and said counter substrate for defining an array of pixels, and a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, each of said TFTs having a channel in an ohmic contact layer and a semiconductor layer, said channel being aligned, as viewed normal to said substrates, with said black matrix and a light shield layer disposed between said channel and said backlight unit,
said channel having a channel length larger at an edge portion of said channel adjacent to one of said pixels than at a central portion thereof, wherein said edge of said channel has a stepwise portion wherein said channel length increases toward said edge portion.
16. A liquid crystal display (LCD) device comprising a thin-film-transistor (TFT) substrate mounting thereon a plurality of TFTs, a counter substrate mounting thereon a black matrix, a liquid crystal layer sandwiched between said TFT substrate and said counter substrate for defining an array of pixels, each of said pixels including one of said TFTs and an associated pixel electrode, and a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, each of said TFTs having a channel in an ohmic contact layer and a semiconductor layer, said channel being aligned, as viewed normal to said substrates, with said black matrix and a light shield layer disposed between said channel and said backlight unit,
said channel having a channel length larger at both edge portions of said channel than at a central portion thereof, wherein said edge portions of said channel have stepwise portions wherein said channel length increases toward said edge portion.
17. The LCD device according to claim 16 , wherein said light shield layer is a gate electrode of said TFT.
18. The LCD device according to claim 16 , wherein said TFTs each have source and drain regions having edges asymmetric to each other with respect to said channel.
19. The LCD device according to claim 16 , wherein the source and drain, regions have chamfered corners.
20. A liquid crystal display (LCD) device comprising a TFT (thin-film-transistor) substrate mounting thereon a plurality of TFTs each having a channel in an ohmic contact layer and a semiconductor layer;
a counter substrate mounting thereon a black matrix;
a liquid crystal layer sandwiched between said TFT substrate and said counter substrate;
a backlight unit disposed at a rear side of said TFT substrate for irradiating said TFT substrate with backlight, said counter substrate mounting thereon a light shield overlapping said channel of said TFTs as view normal to said counter substrate; and
a rear shield film interposed between said channel of said TFTs and said backlight unit to overlap said channel of said TFTs s viewed normal to said TFT substrate,
said channel having a channel length lager at an edge portion of said channel adjacent to one of said pixels than at a central portion thereof, whereupon leakage current of said TFT at said edge portion is suppressed, wherein said TFT includes source and drain electrodes opposing said gate electrode with an intervention of said semiconductor layer, and the edge portion is chamfered.
21. The LCD device according to claim 20 , wherein the drain electrode and the source electrode have chamfered corners.