Light block for pixel arrays
View Patent ↗Imager devices are formed with light block material between microlenses to enhance the characteristics of image acquisition. The light block material may be deposited over the lenses, and then partially removed to expose central portions of the lenses. The invention is applicable to, among other things, imager devices having pixel arrays formed with the light block material and integrated with one or more processing components in a semiconductor device.
1. An imaging device, comprising:
a plurality of photosensors;
a plurality of lenses formed over said plurality of photosensors, each lens being capable of receiving and propagating light to at least one of said photosensors and each lens having an outer surface which is substantially curved;
a plurality of color filters formed below said plurality of lenses; and
at least one light blocking material formed between adjacent lenses and over a portion of said adjacent lenses, said at least one light blocking material extending above an upper level of said substantially curved outer surface of each lens.
2. The imaging device of claim 1 , wherein each lens receives and propagates light to a single corresponding photosensor.
3. The imaging device of claim 1 , wherein said at least one light blocking material comprises a material that absorbs light incident on said at least one material.
4. The imaging device of claim 3 , wherein said at least one light blocking material comprises a material that absorbs substantially all light incident on said at least one material.
5. The imaging device of claim 1 , wherein said at least one light blocking material comprises a material that reflects light incident on said at least one material.
6. The imaging device of claim 5 , wherein said at least one light blocking material comprises a material that reflects substantially all light incident on said at least one material.
7. The imaging device of claim 1 , wherein said at least one light blocking material comprises at least one layer of black photoresist.
8. The imaging device of claim 1 , wherein said at least one light blocking material comprises at least one metal layer.
9. The imaging device of claim 8 , wherein said at least one metal layer comprises aluminum.
10. The imaging device of claim 1 , wherein said at least one light blocking material has generally planar upper and sidewall surfaces.
11. An image pixel array in an imaging device, comprising:
a plurality of lenses formed over a plurality of photosensors, said lenses each having an outer surface which is substantially curved and said photosensors being formed at or beneath an upper surface of a semiconductor substrate;
a plurality of color filters formed below said plurality of lenses; and
at least one light blocking material formed between adjacent lenses and over a portion of said adjacent lenses, said at least one light blocking material capable of either absorbing or reflecting light incident on said at least one light blocking material and extending above an upper extent of said substantially curved outer surface of each lens.
12. The image pixel array of claim 11 , wherein each lens receives and propagates light to a single corresponding photosensor.
13. The image pixel array of claim 11 , wherein said at least one light blocking material comprises a material that absorbs light incident on said at least one material.
14. The image pixel array of claim 13 , wherein said at least one light blocking material comprises a material that absorbs substantially all light incident on said at least one material.
15. The image pixel array of claim 11 , wherein said at least one light blocking material comprises a material that reflects light incident on said at least one material.
16. The image pixel array of claim 15 , wherein said at least one light blocking material comprises a material that reflects substantially all light incident on said at least one material.
17. The image pixel array of claim 11 , wherein said at least one light blocking material comprises at least one layer of black photoresist.
18. The image pixel array of claim 11 , wherein said at least one light blocking material comprises at least one metal layer.
19. The image pixel array of claim 18 , wherein said at least one metal layer comprises aluminum.
20. The image pixel array of claim 11 , wherein said at least one light blocking material has generally planar upper and sidewall surfaces.
21. An imaging device, said imaging device comprising:
a plurality of photosensors;
a plurality of lenses formed over said plurality of photosensors, each lens being capable of receiving and propagating light to at least one of said photo sensors and each lens having a curved outer surface;
a plurality of color filters formed below said plurality of lenses; and at least one light blocking material formed over a portion of and surrounding each lens, said at least one light blocking material extending beyond an upper level of said curved outer surface of each lens.
22. An imager system, comprising:
(i) a processor; and
(ii) an imaging device coupled to said processor, said imaging device comprising:
a plurality of photosensors;
a plurality of lenses formed over said plurality of photo sensors, each lens being capable of receiving and propagating light to at least one of said photosensors and each lens being convex;
a plurality of color filters formed below said plurality of lenses; and
at least one light blocking material formed over a portion of and surrounding each lens, said at least one light blocking material having an upper surface above an upper extent of each convex lens.