IP Library Granted Patent US 7,164,164
Granted Patent B2
US 7,164,164 · App. 10/924,940 · Granted Jan 16, 2007

Display device and photoelectric conversion device

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Quick Facts
Patent No.
US 7,164,164
App. No.
10/924,940
Granted
Jan 16, 2007
Kind
B2
Abstract

A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.

Claims (10)

1. A photoelectric conversion device, comprising:

first, second and third semiconductor regions disposed adjacently in sequence in direction parallel to a surface of an insulation substrate;

a first insulation layer formed on upper face of said first, second and third semiconductor regions;

a gate electrode formed on a portion of upper face of said first insulation layer;

a second insulation layer formed on upper face of said first insulation layer and said gate electrode; and

an electrode layer connected said first and third semiconductor layers via contacts formed on portions of said first and second insulation layers,

said first semiconductor regions being formed by injecting a first conductive impurity in first dose amount;

said third semiconductor regions being formed by injecting a second conductive impurity in second dose amount;

said second semiconductor region being formed by injecting said second conductive impurity in third dose amount less than said second dose amount; and

a photodiode formed using the first, second, and third semiconductor regions.

Assignments (2)
CHANGE OF NAME Recorded Jun 8, 2012
From: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY CO., LTD.
To: TOSHIBA MOBILE DISPLAY CO., LTD.
Reel/Frame 028339/0273 →
CHANGE OF NAME Recorded Jun 8, 2012
From: TOSHIBA MOBILE DISPLAY CO., LTD.
To: JAPAN DISPLAY CENTRAL INC.
Reel/Frame 028339/0316 →