Low ejection energy micro-fluid ejection heads
View Patent ↗A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta2N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.
1. A micro-fluid ejection device structure comprising:
a substrate,
an insulating layer disposed on the substrate;
a plurality of heater resistors formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms disposed on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized in portions of the sacrificial layer that do not substantially underlie the electrodes, to provide a fluid contact layer on the plurality of heater resistors.
2. The micro-fluid ejection device structure of claim 1 , further comprising a dielectric layer deposited and patterned on the electrodes.
3. The micro-fluid ejection device structure of claim 2 , wherein the dielectric layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, diamond-like carbon (DLC), and doped DLC.
4. The micro-fluid ejection device structure of claim 1 , wherein the sacrificial layer comprises a metal selected from the group consisting of tantalum and titanium.
5. The micro-fluid ejection device structure of claim 1 , wherein the structure comprises an ink jet heater chip.
6. An ink jet print head comprising the ink jet heater chip of claim 5 .
7. A micro-fluid ejection device structure comprising:
a semiconductor substrate,
an insulating layer deposted on the semiconductor substrate;
a plurality of heater resistors formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms deposited on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized to provide a fluid contact layer on the plurality of heater resistors; and
further comprising a dielectric layer deposited and patterned on the electrodes; and
a second metal conductive layer deposited on the dielectric layer and a nozzle plate attached to the micro-fluid ejection device structure.
8. A micro-fluid ejection device structure comprising:
a semiconductor substrate,
an insulating layer deposited on the semiconductor substrate;
a plurality of heater resistors formed on the insulating layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms deposited on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized to provide a fluid contact layer on the plurality of heater resistors, and
wherein the first and second metal conductive layers comprise a metal selected from aluminum, copper, and gold.
9. A thermally efficient printhead structure comprising:
a substrate,
an insulative layer disposed on the substrate;
a plurality of heater resistors formed on the insulative layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms disposed on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized in portions of the sacrificial layer that do not substantially underlie the electrodes, to provide an ink contact layer on the plurality of heater resistors.
10. The printhead structure of claim 9 , further comprising a dielectric layer deposited and patterned on the electrodes.
11. The printhead structure of claim 10 , wherein the dielectric layer comprises a material selected from the group consisting of silicon dioxide, silicon nitride, diamond-like carbon (DLC), and doped DLC.
12. The printhead structure of claim 9 , wherein the sacrificial layer comprises a metal selected from the group consisting of tantalum and titanium.
13. A thermally efficient printhead structure comprising:
a semiconductor substrate,
an insulative layer deposited on the semiconductor substrate;
a plurality of heater resistors formed on the insulative layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms deposited on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized to provide an ink contact layer on the plurality of heater resistors;
a dielectric layer deposited and patterned on the electrodes, and
a second metal conductive
layer deposited on the dielectric layer and a nozzle plate attached to the printhead structure.
14. A thermally efficient printhead structure comprising:
a semiconductor substrate,
an insulative layer deposited on the semiconductor substrate;
a plurality of heater resistors formed on the insulative layer from a resistive layer selected from the group consisting of TaAl, Ta 2 N, TaAl(O,N), TaAlSi, Ti(N,O), WSi(O,N), TaAlN, and TaAl/TaAlN;
a sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms deposited on the plurality of heater resistors;
electrodes formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors;
wherein the sacrificial layer is oxidized to provide an ink contact layer on the plurality of heater resistors, and
wherein the first and second metal conductive layers comprise a metal selected from aluminum, copper, and gold.