Semiconductor device and method of manufacturing same
View Patent ↗The present invention provides a semiconductor device formed with a diode array together with bipolar transistors, which is capable of preventing the occurrence of crystal defects developed in cross patterns in deep trench regions and improving device yields, and a method of manufacturing the semiconductor device. A semiconductor device includes a LOCOS oxide film which isolates a plurality of diodes in an X direction, and deep trenches which isolate the plurality of diodes in a Y direction. The depth of each of the deep trenches is deeper than a high density layer embedded below a collector layer of each bipolar transistor. A shallow trench may be used as an alternative to the LOCOS oxide film.
1. A semiconductor device formed with a diode array together with bipolar transistors, comprising:
at least one LOCOS oxide film which isolates one direction of the diode array; and
deep trenches which isolate a direction normal to the one direction of the diode array,
wherein the depth of each of the deep trenches is deeper than a high density layer embedded below a collector layer of the bipolar transistor.
2. A semiconductor device according to claim 1 , further comprising trenches each deeper than the high density layer, each of which connects between the deep trenches in such a manner that a connecting portion of the deep trenches takes a T type.
3. A semiconductor device according to claim 2 , wherein the trenches respectively connecting between the deep trenches in the T type are formed every adjacent two diodes, and an electrode electrically connected to the high density layer is formed between the two diodes.