IP Library Granted Patent US 7,262,467
Granted Patent B2
US 7,262,467 · App. 10/930,276 · Granted Aug 28, 2007

Over charge protection device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,262,467
App. No.
10/930,276
Granted
Aug 28, 2007
Kind
B2
Abstract

An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided on the lower surface on the substrate; a first conductive layer overlying the lower surface of the substrate, the first conductive region being a conductive region of a first type; a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type. The plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions. The first electrode is contacting the plurality of the first and second conductive regions.

Claims (57)

1. An over-voltage protection device, comprising:

a substrate including an upper surface and a lower surface;

a first electrode provided on the upper surface of the substrate;

a second electrode provided on the lower surface on the substrate;

a first conductive layer overlying the lower surface of the substrate, the first conductive layer being a conductive layer of a first type;

a second conductive layer provided over the first conductive layer, the second conductive layer having a higher resistivity than the first conductive layer;

a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and

a plurality of second conductive regions provided proximate the upper surface of the substrate, the plurality of second conductive regions being conductive regions of a second type, the second conductive regions being configured to provide a forward bias with the second conductive layer,

wherein the plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions,

wherein the first electrode is contacting the plurality of the first and second conductive regions,

wherein the over-voltage protection device is configured to act as a resistor when the first electrode is applied with a voltage that is less than a snapback voltage and as a forward-biased diode if the voltage applied exceeds the snapback voltage,

wherein the first electrode is provided a distance w from an edge of the substrate, the distance w being larger than a diffusion length of holes in the second conductive layer.

2. The device of claim 1 , further comprising:

a third electrode provided between the edge of the substrate and the first electrode and on the upper surface of the substrate.

3. The device of claim 2 , wherein the third electrode is a floating electrode.

4. The device of claim 2 , wherein the third electrode is electrically coupled to the second electrode.

5. An over-voltage protection device, comprising:

a substrate including an upper surface and a lower surface;

a first electrode provided on the upper surface of the substrate;

a second electrode provided on the lower surface on the substrate;

a first conductive layer overlying the lower surface of the substrate, the first conductive layer being a conductive layer of a first type;

a second conductive layer provided over the first conductive layer, the second conductive layer having a higher resistivity than the first conductive layer;

a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type; and

a plurality of second conductive regions provided proximate the upper surface of the substrate, the plurality of second conductive regions being conductive regions of a second type, the second conductive regions being configured to provide a forward bias with the second conductive layer,

a plurality of third conductive regions provided proximate the lower surface of the substrate, the plurality of third conductive regions being conductive regions of the first type; and

a plurality of fourth conductive regions provided proximate the lower surface of the substrate, the plurality of fourth conductive regions being conductive regions of the second type,

wherein the plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions,

wherein the first electrode is contacting the plurality of the first and second conductive regions,

wherein the over-voltage protection device is configured to act as a resistor when the first electrode is applied with a voltage that is less than a snapback voltage and as a forward-biased diode if the voltage applied exceeds the snapback voltage,

wherein the third and fourth conductive regions are arranged in an alternating manner.

6. A laser diode module, comprising:

a laser diode;

an over-voltage protection device in parallel connection to the laser diode, the over-voltage protection device including:

a substrate including an upper surface and a lower surface,

a first electrode provided on the upper surface of the substrate,

a second electrode provided on the lower surface on the substrate,

a first conductive layer overlying the lower surface of the substrate, the first conductive layer being a conductive layer of a first type,

a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of the first type, and

a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of a second type, wherein the plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions, wherein the first electrode is contacting the plurality of the first and second conductive regions; and

an electrical contact coupled to both the laser diode and the over-voltage protection device.

7. The module of claim 6 , wherein the over-voltage protection device further comprises:

a second conductive layer provided over the first conductive layer, wherein the first conductive layer is n+ layer and the second conductive layer is n− layer.

8. The device of claim 7 , wherein the plurality of the first conductive regions are n+ regions and the plurality of the second conductive regions are p+ regions.

9. A semiconductor device to provide over-voltage protection, the device comprising:

a substrate including an upper surface and a lower surface;

a first electrode provided on the upper surface of the substrate;

a second electrode provided on the lower surface on the substrate;

a first conductive layer overlying the lower surface of the substrate, the first conductive layer being a conductive layer of n+ type;

a second conductive layer overlying the first conductive layer, the second conductive layer being a conductive layer of n− type;

a plurality of first conductive regions provided proximate the upper surface of the substrate, the plurality of first conductive regions being conductive regions of n+ type; and

a plurality of second conductive region provided proximate the upper surface of the substrate, the plurality of second conductive region being conductive regions of p+ type,

wherein the plurality of the first conductive regions are provided in an alternating manner with the plurality of second conductive regions,

wherein the first electrode is contacting the plurality of the first and second conductive regions, and

wherein the first electrode is provided a distance w from an edge of the substrate.

10. The device of claim 9 , wherein the distance w is longer than a diffusion length of holes in the second conductive layer.

11. The device of claim 10 , further comprising:

a third electrode provided between the edge of the substrate and the first electrode and on the upper surface of the substrate.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 1, 2019
From: IXYS, LLC
To: LITTELFUSE, INC.
Reel/Frame 049056/0649 →
MERGER AND CHANGE OF NAME Recorded Mar 31, 2018
From: IXYS CORPORATION; IXYS, LLC
To: IXYS, LLC
Reel/Frame 045406/0606 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2004
From: KELBERLAU, ULRICH
To: IXYS CORPORATION
Reel/Frame 015764/0157 →