Expansion constrained die stack

1. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components;

wherein at least one of the printed wiring board assemblies include an interposer substrate having a constraining layer that includes carbon; and

wherein the interposer substrate has a stiffness of more than 3 msi.

2. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components;

wherein at least one of the printed wiring board assemblies includes an interposer substrate having a constraining layer that includes carbon;

wherein at least one of the printed wiring board assemblies includes at least one semiconductor die attached to the interposer substrate; and

wherein the semiconductor die is attached to the interposer substrate via a redistribution layer and interconnection components.

3. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components;

wherein at least one of the printed wiring board assemblies includes an interposer substrate having a constraining layer that includes carbon;

wherein at least one of the printed wiring board assemblies includes at least one semiconductor die attached to the interposer substrate; and

wherein the semiconductor die is attached to the interposer substrate via interconnection components.

4. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components;

wherein at least one of the printed wiring board assemblies includes an interposer substrate having a constraining layer that includes carbon;

wherein at least one of the printed wiring board assemblies includes at least one semiconductor die attached to the interposer substrate; and

wherein multiple semiconductor dies are located on one side of the interposer substrate.

5. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components;

wherein at least one of the printed wiring board assemblies includes an interposer substrate having a constraining layer that includes carbon;

wherein at least one of the printed wiring board assemblies includes at least one semiconductor die attached to the interposer substrate; and

wherein multiple semiconductor dies are located on both sides of the interposer substrate.

6. A die stack, comprising:

a stack of printed wiring board assemblies that are connected via interconnection components; and

at least one interposer substrate located between the printed wiring board assemblies in the die stack;

wherein at least one of the printed wiring board assemblies includes an interposer substrate having a constraining layer that includes carbon; and

wherein adjacent printed wiring board assemblies are connected to the interposer substrate via interconnection components.

7. A printed wiring board assembly, comprising:

a semiconductor die;

an electrical connection layer; and

an interposer substrate;

wherein the interposer substrate includes a layer constructed using a carbon material; and

wherein the electrical connection layer includes a redistribution layer and interconnection components.

8. The printed wiring board assembly of claim 7 , wherein the redistribution layer is constructed from at least one layer of dielectric film and a thin film solderable layer.

9. A printed wiring board assembly, comprising:

a semiconductor die;

an electrical connection layer;

an interposer substrate; and

additional semiconductor dies connected to the interposer substrate via electrical connection layers;

wherein the interposer substrate includes a layer constructed using a carbon material; and

wherein the electrical connection layer includes a redistribution layer and interconnection components.

10. The printed wiring board assembly of claim 9 , wherein at least two semiconductor dies are connected to the same side of the intermediate substrate via electrical connection layers.

11. The printed wiring board assembly of claim 9 , wherein at least two semiconductor dies are connected to the opposite sides of the intermediate substrate via electrical connection layers.

12. A die stack assembly, comprising:

a stack of printed wiring board assemblies connected via interconnection components;

a printed wiring board connected to the stack of printed wiring board assemblies via interconnection components;

wherein at least one of the printed wiring board assemblies include an interposer substrate having a constraining layer that includes carbon.

13. A printed wiring board assembly, comprising;

a semiconductor die;

an electrical connection layer; and

an interposer substrate;

wherein the interposer substrate includes a layer constructed using a carbon material;

wherein the electrical connection layer includes a redistribution layer and interconnection components; and

wherein the interposer substrate includes a printed wiring board and interconnection components.

14. The printed wiring board assembly of claim 13 wherein:

the printed wiring board includes at least one electrical layer and at least one constraining layer; and

the constraining layer includes chemical vapor deposition (CVD) diamond.

15. The printed wiring board assembly of claim 13 wherein:

the printed wiring board includes at least one electrical layer and at least one constraining layer; and

the constraining layer includes diamond like carbon.

16. The printed wiring board assembly of claim 13 , wherein the printed wiring board includes at least one electrical layer, at least one dielectric layer and at least one constraining layer that is plated on at least one side with a layer of metal.

17. The printed wiring board assembly of claim 13 wherein constraining layer is constructed using a material having a thermal conductivity greater than 15 W/m.K, tensile modulus greater than 20 msi, electrical resistance greater than 10 9 ohms, a dielectric constant less than 6.0 at 1 MHz and a coefficient of thermal expansion less than 4ppm/° C.

18. The printed wiring board assembly of claim 17 , wherein the constraining layer is constructed from a material having a thermal conductivity greater than 100 W/m.K, tensile modulus greater than 50 msi, electrical resistance greater than 10 10 ohms, a dielectric constant less than 5.5 at 1 MHz and a coefficient of thermal expansion less than 3 ppm/° C.

19. The printed wiring board assembly of claim 17 , wherein the constraining layer is constructed using a material having a thermal conductivity greater than 500 W/m.K, a tensile modulus greater than 90 msi, an electrical resistance greater than 10 11 ohms, a dielectric constant less than 5.0 at 1 MHz and a coefficient of thermal expansion less than 2 ppm/° C.

20. The printed wiring board assembly of claim 13 , wherein the interposer substrate has a coefficient of thermal expansion between −2 ppm/° C. to 12 ppm/° C.

21. The printed wiring board assembly of claim 20 , wherein the interposer substrate has a coefficient of thermal expansion of −1 ppm/° C. to 9 ppm/° C.

22. The printed wiring board assembly of claim 20 , wherein the interposer substrate has a coefficient of thermal expansion of between 1 ppm/° C. to 6 ppm/° C.

23. The printed wiring board assembly of claim 13 , wherein the printed wiring board includes at least one electrical layer, at least one dielectric layer and at least one constraining layer.

24. The printed wiring board assembly of claim 23 , wherein the constraining layer is an electrically conductive material.

25. The printed wiring board assembly of claim 24 , wherein:

the dielectric layers am interposed between the electrical layers;

the dielectric layers are interposed between the constraining layers;

the dielectric layers are interposed between the electrical layers and the constraining layers.

26. The printed wiring board assembly of claim 24 , wherein the constraining layer forms a functional layer within the printed wiring board.

27. The printed wiring board assembly of claim 24 , wherein the constraining layer includes resin impregnated Uni tape.

28. The printed wiring board assembly of claim 24 , wherein the constraining layer includes resin impregnated compression molded chopped carbon fiber.

29. The printed wiring board assembly of claim 24 , wherein the constraining layer is made from a composite of carbon fiber reinforced with main.

30. The printed wiring board assembly of claim 29 , wherein the resin used to impregnate the carbon fiber is an epoxy.

31. The printed wiring board assembly of claim 29 , wherein the resin used to impregnate the carton fiber is Cynate ester.

32. The printed wiring board assembly of claim 29 , wherein the resin used to impregnate the carbon fiber is polyimide.

33. The printed wiring board assembly of claim 29 , wherein the resin used to impregnate the carbon fiber is Bismaleimide Triazine epoxy.

34. The printed wiring board assembly of claim 24 , wherein the constraining composite layer has a thickness greater than 0.002 inches, in-plane thermal conductivity greater than 1.5 W/m.K, tensile modulus greater than 10 msi, a dielectric constant greater than 6.0 and a coefficient of thermal expansion that is less than 4 ppm/° C. and an electrical resistivity of less than 13 μΩ.m.

35. The printed wiring board assembly of claim 34 , wherein the constraining layer has a thickness greater than 0.003 inches, in-plane thermal conductivity greater than 20 W/m.k, tensile modulus greater than 15 msi, a dielectric constant greater than 8.0 and a coefficient of thermal expansion that is less than 3 ppm/° C. and an electrical resistivity of less than 10 μΩ.m.

36. The printed wiring board assembly of claim 34 , wherein the constraining layer has a thickness between 0.004 inches and 0.020 inches, an in-plane thermal conductivity greater than 40 W/m.K, a tensile modulus greater than 25 msi, a dielectric constant greater than 12.0, a coefficient of thermal expansion that is less than 2 ppm/° C. and the carbon or graphite that is used in the construction of the constraining layer has an electrical resistivity between 8.5 μΩ.m to 1.1 μΩ.m.