Method of manufacturing a write pole

1. A method of fabricating a magnetic write head comprising:

depositing a layer of magnetic material on a flux guide layer;

depositing a first hard mask layer on said layer of magnetic material;

depositing a second hard mask layer on said first hard mask layer;

depositing a third hard mask layer on said second hard mask layer;

depositing a photo-resist layer upon said third hard mask layer;

patterning said photo-resist layer to define a write pole;

reactive ion etching said third hard mask layer exposed by said pattern photo-resist layer wherein a third hard mask defining said write pole is formed;

reactive ion etching said second hard mask layer and said first hard mask layer exposed by said patterned third hard mask wherein a first hard mask and second hard mask defining said write pole is formed;

ion milling said layer of magnetic material exposed by said second hard mask and said first hard mask wherein a beveled write pole is formed;

forming a conformal spacer upon a portion of a flare length proximate a tip of said beveled write pole; and

forming a shield layer upon said conformal spacer adjacent said flare length proximate said tip of said beveled write pole.

2. The method according to claims 1 , further comprising sweeping and rotating said ion milling to control a trailing edge width of said beveled write pole.

3. The method according to claim 1 , further comprising sweeping and rotating said ion milling to control a flare point of said beveled write pole.

4. The method according to claim 1 , further comprising:

depositing a second resist layer upon said write pole; and

patterning said second resist layer to expose said flare length proximate said tip of said write pole wherein said conformal spacer is defined.

5. The method according to claim 1 , wherein forming said conformal spacer includes depositing a non-conductive material utilizing a deposition process selected from the group consisting of chemical vapor deposition, atomic layer deposition, pulsed-atomic layer deposition, low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, and high-density plasma deposition.

6. The method according to claim 5 , wherein said conformal spacer includes said non-conductive material selected from the group consisting of aluminum oxide, silicon oxide, silicon nitride, tungsten, and silicon oxynitride.

7. The method according to claim 1 , wherein:

said first hard mask layer includes a layer of carbon;

said second hard mask layer includes a layer of polyimide; and

said third hard mask layer includes a layer of oxide.

8. The method according to claim 7 , wherein:

said reactive ion etching said third hard mask layer utilizes a fluorine-carbon based chemistry; and

said reactive ion etching said second hard mask layer and said first hard mask layer utilizes an oxygen-carbon based chemistry.