Method for forming oriented film, oriented film, substrate for electronic device, liquid crystal panel, and electronic device
View Patent ↗A method for forming an oriented film is provided for forming an oriented film on a base material by irradiating the surface of the base material where the oriented film will be formed with an ion beam comprising nitrogen ions from a direction inclined at a prescribed angle θ a with respect to the direction perpendicular to the surface, while evaporating carbon from an evaporation source. The prescribed angle, θ a , is preferably 45-89°. The accelerating voltage of the ion beam comprising nitrogen ions is preferably 100-500 V. The electric current of the ion beam comprising nitrogen ions is preferably 10-500 mA.
1. A method for forming an oriented film on a base material for a liquid crystal device having a liquid crystal therein, comprising steps of:
irradiating a surface of said base material with an ion beam comprising nitrogen ions from a direction inclined at a prescribed angle, θ a , with respect to a direction perpendicular to said surface, and
simultaneously evaporating carbon from an evaporation source to deposit on the surface being irradiated while performing said irradiating step to form the oriented film,
wherein the oriented film has unsaturated C—N bonds and a plurality of π electron orbitals formed on a surface of the oriented film at a predetermined pretilt angle, said π electron orbitals interacting with the liquid crystal to to orient the liquid crystal.
2. The method for forming an oriented film according to claim 1 , wherein said prescribed angle, θ a , is about 45-89°.
3. The method for forming an oriented film according to claim 1 , wherein an accelerating voltage of said ion beam comprising said nitrogen ions is about 100-500 V.
4. The method for forming an oriented film according to claim 1 , wherein an electric current of said ion beam comprising said nitrogen ions is about 10-500 mA.
5. The method for forming an oriented film according to claim 1 , wherein a pressure of an atmosphere near said surface during formation of the oriented film is about 5×10 −2 Pa.
6. The method for forming an oriented film according to claim 1 , further comprising irradiating said surface of said base material with an ion beam comprising oxygen ions from a direction inclined at a prescribed angle, θ b , with respect to the direction perpendicular to said surface.
7. The method for forming an oriented film according to claim 6 , wherein said angle θ a and said angle θ b are substantially equal to each other.
8. The method for forming an oriented film according to claim 1 , wherein the oriented film is formed at a rate of about 2-10 nm/min.