Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus
View Patent ↗A method of forming an inorganic alignment film made substantially of an inorganic material on a base substrate is provided comprising a milling process of irradiating ion beams onto the surface of the base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle θ b with respect to a direction vertical to the surface, and a film-forming process of forming the inorganic alignment film on the base substrate onto which the ion beams are irradiated. In the milling process, the predetermined angle θ b is preferably 2° or more. In the milling process, an acceleration voltage of the ion beams during the irradiation of the ion beams is preferably 400 to 1400 V.
1. A method of forming an inorganic alignment film made substantially of an inorganic material on a base substrate, comprising:
a milling step of irradiating ion beams onto a surface of the base substrate, on which the inorganic alignment film is to be formed, from a direction inclined at a predetermined angle θ b with respect to a direction vertical to the surface; and
a film-forming step of forming the inorganic alignment film on the base substrate onto which the ion beams are irradiated,
wherein in the milling step, an acceleration voltage of the ion beams during the irradiation of the ion beams is about 800 to about 1400 V.
2. The method of forming an inorganic alignment film according to claim 1 , wherein in the milling step, concave portions having a predetermined directivity are formed in the base substrate by irradiating the ion beams onto the base substrate.
3. The method of forming an inorganic alignment film according claim 1 , wherein in the milling step, the predetermined angle θ b is at least about 2°.
4. The method of forming an inorganic alignment film according to claim 1 , wherein in the milling step, a current of the ion beams to be irradiated is about 100 to about 1000 mA.
5. The method of forming an inorganic alignment film according to claim 1 , wherein in the milling step, a pressure of an atmosphere near the base substrate is about 5.0×10 −3 Pa or less.
6. The method of forming an inorganic alignment film according to claim 1 , wherein the film-forming step further comprises forming the inorganic alignment film by a sputtering method.
7. The method of forming an inorganic alignment film according to claim 1 , wherein the inorganic material substantially comprises silicon oxide.