Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus
View Patent ↗A method of forming an inorganic alignment film on a base substrate is provided comprising forming a film made substantially of an inorganic material on the base substrate, and irradiating ion beams onto the surface of the film from a direction inclined at a predetermined angle θ b with respect to the direction vertical to the surface. By irradiating the ion beams onto the film, concave portions having a predetermined directivity are formed on the film. The predetermined angle θ b is preferably 2° or more.
1. A method of forming an inorganic alignment film on a base substrate, comprising:
a film-forming step of forming a film made substantially of an inorganic material on the base substrate; and
a milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θ b with respect to a direction vertical to the surface of the film,
wherein the milling step further includes forming concave portions in the surface of the film, the concave portions having inclined surfaces, and arranging an inclination direction of the inclined surfaces to provide the concave portions with a predetermined directivity.
2. The method of forming an inorganic alignment film according to claim 1 ,
wherein the predetermined angle θ b is at least about 20°.
3. The method of forming an inorganic alignment film according to claim 1 ,
wherein in the milling step, an acceleration voltage of the ion beams during the irradiation of the ion beams is about 400 to about 1400 V.
4. The method of forming an inorganic alignment film according to claim 1 ,
wherein in the milling step, a current of the ion beams to be irradiated is about 100 to about 1000 mA.
5. The method of forming an inorganic alignment film according to claim 1 ,
wherein in the milling step, a pressure of an atmosphere in the vicinity of the film is 5.0×10 −3 Pa or less.
6. The method of forming an inorganic alignment film according to claim 1 ,
wherein the film-forming step further comprises a sputtering method.
7. The method of forming an inorganic alignment film according to claim 1 ,
wherein the inorganic material substantially comprises silicon oxide.
8. An inorganic alignment film formed by a method of forming an inorganic alignment film according to claim 1 .
9. The inorganic alignment film according to claim 8 , wherein an average thickness of the inorganic alignment film is about 0.02 to about 0.3 μm.
10. A substrate for an electronic device, comprising:
electrodes on a substrate; and
an inorganic alignment film according to claim 8 on the substrate.
11. A liquid crystal panel comprising:
an inorganic alignment film according to claim 8 and
a liquid crystal layer.
12. An electronic apparatus comprising a liquid crystal panel according to claim 11 .
13. An electronic apparatus comprising light valves, each light valve having a liquid crystal panel according to claim 11 ,
wherein an image is projected using at least one of the light valves.
14. An electronic apparatus comprising:
three light valves corresponding to red, green and blue, which form an image;
a light source;
a color separating optical system for separating light from the light source into red, green and blue light components and for guiding each light component to the corresponding light valve;
a color synthesizing optical system for synthesizing the image; and
a projecting optical system for projecting the synthesized image, wherein each light valve comprises a liquid crystal panel according to claim 11 .
15. A liquid crystal panel comprising:
a pair of inorganic alignment films according to claim 8 ; and
a liquid crystal layer interposed between the pair of inorganic alignment films.
16. A method of forming an inorganic alignment film on a base substrate, comprising:
a film-forming step of forming a film made substantially of an inorganic material on the base substrate; and
a milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θ b with respect to a direction vertical to the surface of the film,
wherein in the milling step, a current of the ion beams to be irradiated is about 100 to about 1000 mA.
17. A method of forming an inorganic alignment film on a base substrate, comprising:
a film-forming step of forming a film made substantially of an inorganic material on the base substrate; and
a milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θ b with respect to a direction vertical to the surface of the film,
wherein an average thickness of the inorganic alignment film is about 0.02 to about 0.3 μm.