Electrostatic capacitance sensing device and method of driving the same

1. An electrostatic capacitance sensing device, the device comprising:

M number of row lines;

N number of column lines; and

electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns,

each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element;

the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film;

the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film;

the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film;

the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film, and

the semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select the column being coupled to each other in series, wherein:

the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode;

the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines; and

the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines.

2. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

x=M, where x is a number of power-supply lines.

3. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

x=M/2, where x is a number of power-supply lines.

4. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

M/2<x<M, where x is a number of power-supply lines.

5. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

y=N, where y is a number of output lines.

6. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

y=N/2, where y is a number of output lines.

7. The electrostatic capacitance sensing device according to claim 1 , the following relationship being satisfied:

N/2<y<N, where y is a number of output lines.

8. The electrostatic capacitance sensing device according to claim 1 , the semiconductor device to amplify a signal being disposed between the semiconductor device for row selection and the semiconductor device to select the column.

9. An electrostatic capacitance sensing device, the device comprising:

M number of row lines;

N number of column lines;

a path gate for an output signal; and

electrostatic capacitance sensing elements formed at intersections between the row lines and the column lines, and arranged in a matrix of M rows and N columns,

each of the electrostatic capacitance sensing elements including a signal sensing element, a signal amplifying element, a row selection element, and a column selection element;

the path gate for output signal being a semiconductor device for output signal pass gate that includes a gate electrode, a gate insulation film, and a semiconductor film;

the signal sensing element including a capacitance sensing electrode and a capacitance sensing dielectric film;

the signal amplifying element being a semiconductor device to amplify a signal that includes a gate electrode, a gate insulation film, and a semiconductor film;

the row selection element being a semiconductor device for row selection that includes a gate electrode, a gate insulation film, and a semiconductor film;

the column selection element being a semiconductor device to select a column that includes a gate electrode, a gate insulation film, and a semiconductor film,

the semiconductor device to amplify a signal, the semiconductor device for row selection, and the semiconductor device to select a column being coupled to each other in series,

the gate electrode of the MIS type thin-film semiconductor device to amplify a signal being coupled to the capacitance sensing electrode,

the gate electrode of the MIS type thin-film semiconductor device for row selection being coupled to one of the row lines, and

the gate electrode of the MIS type thin-film semiconductor device to select a column being coupled to one of the column lines.

10. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

x=M, where x is a number of power-supply lines.

11. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

x=M/2, where x is a number of power-supply lines.

12. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

M/2<x<M, where x is a number of power-supply lines.

13. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

y=N, where y is a number of output lines.

14. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

y=N/2, where y is a number of output lines.

15. The electrostatic capacitance sensing device according to claim 9 , the following relationship being satisfied:

N/2<y<N, where y is a number of output lines.

16. The electrostatic capacitance sensing device according to claim 9 , the semiconductor device to amplify a signal being disposed between the semiconductor device for row selection and the semiconductor device to select the column.