IP Library Granted Patent US 7,295,256
Granted Patent B2
US 7,295,256 · App. 10/934,497 · Granted Nov 13, 2007

Method for forming pattern of liquid crystal display device and method for fabricating thin film transistor array substrate of liquid crystal display device using the same

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Quick Facts
Patent No.
US 7,295,256
App. No.
10/934,497
Granted
Nov 13, 2007
Kind
B2
Abstract

A method for forming a pattern of a liquid crystal display device is provided. The method includes providing a substrate having a layer to be patterned, providing a master substrate having an intaglio portion corresponding to a desired pattern, filling an organic material into the intaglio portion of the master substrate, placing the master substrate in contact with the substrate, hardening the organic material to produce a hardened organic film pattern, transferring the hardened organic film pattern onto a surface of the layer to be patterned by separating the master substrate from the substrate, and etching the layer to be patterned by using the organic film pattern as a mask.

Claims (84)

1. A method for forming a pattern of a liquid crystal display device, comprising:

providing a substrate having a layer to be patterned;

providing a master substrate having an intaglio portion corresponding to a desired pattern;

filling an organic material into the intaglio portion of the master substrate;

placing the master substrate in contact with the substrate;

hardening the organic material to produce a hardened organic film pattern;

transferring the hardened organic film pattern onto a surface of the layer to be patterned by separating the master substrate from the substrate; and

etching the layer to be patterned by using the organic film pattern as a mask.

2. The method of claim 1 , wherein the master substrate includes a mold having the intaglio portion.

3. The method of claim 2 , wherein the mold is made of a transparent elastic resin.

4. The method of claim 3 , wherein the transparent elastic resin is PDMS (polydimethylsiloxane).

5. The method of claim 1 , wherein the organic material is a photosensitive material.

6. The method of claim 5 , wherein the photosensitive material is photoresist.

7. The method of claim 1 , wherein the layer to be patterned is an insulating layer, a semiconductor layer, or a metal layer.

8. The method of claim 1 , wherein the filling step fills in the intaglio portion from a first side of the master substrate.

9. The method of claim 8 , wherein the hardening step includes irradiating light onto a second side of the master substrate.

10. The method of claim 9 , wherein the first and second sides of the master substrate are opposite sides.

11. The method of claim 1 , wherein the filling of the organic material is made by a spin coating method, an inkjet printing method, or a knife jetting method.

12. A method for fabricating a thin film transistor (TFT) array substrate for a liquid crystal display device, comprising:

providing a first substrate;

forming a gate metal on the first substrate;

filling an organic material into the intaglio portion of a master substrate;

placing the master substrate in contact with the first substrate;

hardening the first organic material to produce a hardened first organic film pattern;

transferring the hardened first organic film pattern onto the gate metal by separating the master substrate from the first substrate;

forming a gate electrode by etching the gate metal by using the first organic film pattern as a mask;

depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed;

forming an active pattern by patterning the n+ amorphous silicon thin film and the amorphous silicon thin film;

forming a source electrode and a drain electrode on the active pattern;

forming a second insulating film having a contact hole exposing a part of the drain electrode; and

forming a pixel electrode electrically connected to the drain electrode through the contact hole.

13. The method of claim 12 , wherein the step of forming the active pattern comprises:

transferring a second organic film pattern onto the first substrate; and

forming the active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the second organic film pattern as a mask.

14. A method for fabricating a thin film transistor (TFT) array substrate of liquid crystal display device, comprising:

providing a first substrate;

forming a gate electrode on the first substrate;

depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed;

filling an organic material into the intaglio portion of a master substrate;

placing the master substrate in contact with the first substrate;

hardening the organic material to produce a hardened organic film pattern;

transferring the hardened organic film pattern onto the first substrate by separating the master substrate from the first substrate;

forming an active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the organic film pattern as a mask;

forming a source electrode and a drain electrode on the active pattern;

forming a second insulating film having a contact hole exposing a part of the drain electrode; and

forming a pixel electrode electrically connected to the drain electrode through the contact hole.

15. The method of claim 14 , wherein the organic film pattern has a width that covers stepped portions of layers on the gate electrode.

16. A method of forming a pattern of a display device, comprising:

providing a mold layer having a groove filled with a photosensitive material;

hardening the photosensitive material;

transferring the hardened photosensitive material onto a surface of a layer to be patterned; and

patterning the layer to be patterned by using the transferred photosensitive material as a mask.

17. The method of claim 16 , wherein the layer patterned by the patterning step is a gate electrode.

18. The method of claim 16 , wherein the layer patterned by the patterning step is at least one of an active layer and an ohmic contact layer.

19. The method of claim 16 , wherein the hardening step hardens the photosensitive material by irradiating light towards one surface of the mold layer.

20. The method of claim 16 , wherein the transferring step includes:

placing the mold layer in contact with the layer to be patterned; and thereafter separating the mold layer from the layer to be patterned.

21. The method of claim 12 , wherein the hardening step includes irradiating light to the organic film pattern in the master substrate.

22. The method of claim 14 , wherein the hardening step includes irradiating light to the organic film pattern in the master substrate.

23. A method for fabricating a thin film transistor (TFT) array substrate for a liquid crystal display device, comprising:

providing a first substrate;

forming a gate metal on the first substrate;

providing a mold having a groove filled with a photosensitive material;

hardening the photosensitive material;

transferring the hardened photosensitive material onto the gate metal;

forming a gate electrode by etching the gate metal by using the transferred photosensitive material as a mask;

depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed;

forming an active pattern by patterning the n+ amorphous silicon thin film and the amorphous silicon thin film;

forming a source electrode and a drain electrode on the active pattern;

forming a second insulating film having a contact hole exposing a part of the drain electrode; and

forming a pixel electrode electrically connected to the drain electrode through the contact hole.

24. The method of claim 23 , wherein the hardening includes irradiating light to the photosensitive material in the mold.

25. A method for fabricating a thin film transistor (TFT) array substrate of liquid crystal display device, comprising:

providing a first substrate;

forming a gate electrode on the first substrate;

depositing a first insulating film, an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate on which the gate electrode is formed;

providing a mold having a groove filled with a photosensitive material;

hardening the photosensitive material;

transferring the hardened photosensitive material onto the first substrate;

forming an active pattern by etching the n+ amorphous silicon thin film and the amorphous silicon thin film by using the transferred photosensitive material as a mask;

forming a source electrode and a drain electrode on the active pattern;

forming a second insulating film having a contact hole exposing a part of the drain electrode; and

forming a pixel electrode electrically connected to the drain electrode through the contact hole.

26. The method of claim 25 , wherein the hardening includes irradiating light to the photosensitive material in the mold.

Assignments (2)
CHANGE OF NAME Recorded May 21, 2008
From: LG.PHILIPS LCD CO., LTD.
To: LG DISPLAY CO., LTD.
Reel/Frame 020985/0675 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2004
From: KIM, JIN OOK
To: LG. PHILIPS LCD CO., LTD.
Reel/Frame 015769/0016 →