Thin-film read element with multiple read sensors

1. A thin-film read element for use in reading magnetic signals from a device, the read element comprising:

a first thin-film read sensor and a second thin-film read sensor, each read sensor converting the magnetic signal to electrical signals;

wherein the read sensors are formed on a single chip structure; and

wherein each layer of the single chip structure is parallel to the other layers.

2. The read element of claim 1 wherein the single chip structure includes a first shield layer and a second shield layer on opposite sides of the first read sensor and a third shield layer and a fourth shield layer on opposite sides of the second read sensor, the first and second shield layers defining at least a portion of a first window for the first read sensor and the third and fourth shields layers defining at least a portion of a second window of the second read sensor, the read sensors receiving the magnetic signals through the windows.

3. The read element of claim 2 wherein the single chip structure includes a planarization layer between the second shield layer and the third shield layer, the planarization layer providing a level surface for positioning the second read sensor relative to the first read sensor.

4. The read element of claim 3 wherein the single chip structure includes an insulator deposited between each of the layers, the read sensors, and the planarization layer for electrical isolation.

5. The read element of claim 4 wherein the single chip structure includes a first ceramic layer and a second ceramic layer at opposite ends of the chip structure to define a length of the structure.

6. The read element of claim 1 wherein the second read sensor is offset from the first read sensor.

7. The read element of claim 6 wherein the second read sensor is offset in a X and Y direction relative to the first read sensor.

8. A thin-film read element for use in reading magnetic signals from a device, the read element comprising:

a first thin-film read sensor and a second thin-film read sensor, each read sensor converting the magnetic signal to electrical signals;

wherein the read sensors are formed on a single chip structure; and

wherein the single chip structure includes a first shield and a second shield on opposite sides of the first read sensor and a third shield and a fourth shield on opposite sides of the second read sensor, the first and second shield defining at least a portion of a first window for the first read sensor and the third and fourth shields defining at least a portion of a second window of the second read sensor, the read sensors receiving the magnetic signals through the windows.

9. The read element of claim 8 wherein the single chip structure includes a planarization layer between the second shield and the third shield, the planarization layer providing a level surface for positioning the second read sensor relative to the first read sensor.

10. The read element of claim 9 wherein the single chip structure includes an insulator deposited between each of the shields, the read sensors, and the planarization layer for electrical isolation.

11. The read element of claim 10 wherein the single chip structure includes a first ceramic layer and a second ceramic layer at opposite ends of the chip structure to define a length of the structure.

12. A thin-film read element for use in reading magnetic signals from a device, the read element comprising:

a first thin-film read sensor and a second thin-film read sensor, each read sensor converting the magnetic signal to electrical signals;

wherein the read sensors are formed on a single chip structure; and

wherein the second read sensor is offset from the first read sensor.

13. The read element of claim 12 wherein the second read sensor is offset in a X and Y direction relative to the first read sensor.