Semiconductor distributed feedback (DFB) laser array with integrated attenuator
View Patent ↗A semiconductor laser with an integrated attenuator on the same chip as the laser. In some embodiments the attenuator is formed of the same material as the laser, but without a grating in the attenuator. In some embodiments the laser and attenuator are fabricated concurrently, with the attenuator positioned at the front of the laser and differing from the laser only in not having a grating and having a much smaller length. Level of attenuation by the attenuator is adjustable based on drawing photogenerated current from the attenuator.
1. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same predefined bandgap as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
wherein the laser section and attenuator section each comprise:
a waveguide; and
a grating layer; and
wherein the grating layer of the laser section includes a grating and the grating layer of the attenuator section does not include a grating:
wherein the laser section and the attenuator section each have a length, and the length of the laser section is much greater than the length of the attenuator section; and
wherein the length of the laser section is approximately 15 times greater than the length of the attenuator section.
2. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same predefined bandgap as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section; and
wherein the laser has a front and a rear, and the attenuator section is positioned approximate the front of the laser, and further comprising a semiconductor absorbing section position approximate the rear of the laser, the semiconductor absorbing section comprised of active material having nominally the same predefined bandgap as the active material of the semiconductor laser section.
3. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same predefined bandgap as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
at least one further laser section and at least one further attenuator section to comprise a plurality of semiconductor laser sections and a plurality of semiconductor attenuator sections integrated on the same chip;
each of the semiconductor laser sections comprised of active material having a predefined bandgap;
each of the semiconductor attenuator sections receiving light generated by a corresponding laser section and comprised of active material having nominally the same predefined bandgap as the active material of the corresponding laser section;
circuitry coupled to the at least one further attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the at least one further attenuator section; and
wherein each laser has a front and rear, and each corresponding attenuator section is positioned approximate the front of each corresponding laser, and further comprising semiconductor absorbing sections, a corresponding semiconductor absorbing section positioned approximate the rear of each laser, each semiconductor absorbing section comprised of active material having nominally the same predefined bandgap as the active material of the corresponding semiconductor laser section.
4. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same predefined bandgap as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
a monitor unit for detecting an indication of power of light emitted from the attenuator section;
wherein the circuitry comprises a control unit configured to draw current from the attenuator section based on the indication of power of light emitted from the attenuator section; and
at least one further monitor unit to comprise a plurality of monitor units, each of the monitor units detecting an indication of power of light emitted from any position relative the attenuator section;
wherein the circuitry comprises a control unit configured to draw current from the attenuator section based on the indication of power of light detected by the at least one further monitor unit.
5. The semiconductor based optoelectronic device of claim 4 wherein the at least one further monitor unit comprises a photodetector.
6. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same composition as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
wherein the laser section and the attenuator section each comprise:
a waveguide; and
a grating layer; and
wherein the grating layer of the laser section includes a grating and the grating layer of the attenuator section does not include a grating;
wherein the laser section and the attenuator section each have a length, and the length of the laser section is much greater than the length of the attenuator section; and
wherein the length of the laser section is approximately 15 times greater than the length of the attenuator section.
7. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same composition as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
wherein the laser has a front and a rear, and the attenuator section is positioned approximate the front of the laser, and further comprising a semiconductor absorbing section position approximate the rear of the laser, the semiconductor absorbing section comprised of active material having nominally the same composition as the active material of the semiconductor laser section.
8. A semiconductor based optoelectronic device, comprising:
a semiconductor laser section and a semiconductor attenuator section integrated on the same chip;
the semiconductor laser section comprised of active material having a predefined bandgap;
the semiconductor attenuator section positioned to receive light generated by the laser section and comprised of active material having nominally the same composition as the active material of the semiconductor laser section;
circuitry coupled to the semiconductor attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the semiconductor attenuator section;
at least one further laser section and at least one further attenuator section to comprise a plurality of semiconductor laser sections and a plurality of semiconductor attenuator seconds integrated on the same chip;
each of the semiconductor laser sections comprised of active material having a predefined bandgap;
each of the semiconductor attenuator sections receiving light generated by a corresponding laser section and comprised of active material having nominally the same composition as the active material of the corresponding laser section; and
circuitry coupled to the at least one further attenuator section, the circuitry configured to collect photocurrent generated in the semiconductor attenuator section and thereby attenuate light by the at least one further attenuator section.
9. The semiconductor optoelectronic device of claim 8 wherein the semiconductor attenuator sections are electrically coupled.
10. The semiconductor optoelectronic device of claim 9 wherein the circuitry coupled to the semiconductor attenuator section and the circuitry coupled to the at least one further attenuator section is the same circuitry and is coupled to a contact pad electrically coupled to all of the semiconductor attenuator sections.
11. The semiconductor optoelectronic device of claim 8 wherein each laser has a front and a rear, the front being in the direction in which light is transmitted from the semiconductor based optoelectronic device, and each corresponding attenuator section is positioned approximate the front of each corresponding laser.
12. The semiconductor optoelectronic device of claim 8 wherein each laser has a front and rear, the front being in the direction in which light is transmitted from the semiconductor based optoelectronic device, and each corresponding attenuator section is positioned approximate the rear of each corresponding laser.
13. The semiconductor optoelectronic device of claim 8 wherein each laser has a front and rear, and each corresponding attenuator section is positioned approximate the front of each corresponding laser, and further comprising semiconductor absorbing section, a corresponding semiconductor absorbing section positioned approximate the rear of each laser, each semiconductor absorbing section comprised of active material having nominally the same composition as the active material of the corresponding semiconductor laser section.