Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
View Patent ↗A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.
1. A vertical cavity surface emitting laser (VCSEL) structure comprising:
a substrate consisting of a III-V material;
a canti-lever arm apparatus affixed to the substrate by a connecting block;
a tuning pad for controlling an electrostatic force applied to the canti-lever arm apparatus or to the substrate to control a resonant wavelength of the VCSEL;
one or more conducting layers positioned on said substrate including a semiconductor laser head; and
void spaces positioned between at least the semiconductor laser head and the tuning pad for electrical isolation there between.
2. The structure of claim 1 , further comprising a Fabry-Perot cavity, wherein a resonant frequency of the Fabry-Perot cavity is continuously tunable in relation to the electrostatic force.
3. The structure of claim 2 , the Fabry-Perot cavity comprises a top reflector and a bottom reflector.
4. The structure of claim 3 , at least one of the top reflector or the reflector comprises one or more distributed Bragg reflector (DBR) layers.
5. The structure of claim 4 , at least one of the one or more DBR layers comprises AlGaAs.
6. The structure of claim 1 , a deflection of the cantilever arm apparatus is tunable via application of the electrostatic force.
7. The structure of claim 1 , the length of the cantilever arm apparatus is at least about 100 microns.
8. The structure of claim 1 , further comprising a heat spreader layer that reduces the heat accumulation in the VCSEL structure.
9. The structure of claim 8 , the heat spreader layer comprises one or more group III-V materials.
10. The apparatus of claim 1 , the substrate comprises GaAs.
11. The apparatus of claim 1 , the substrate comprises InP.
12. The apparatus of claim 3 , the bottom reflector comprises one or more distributed Bragg reflector layers.
13. The apparatus of claim 1 , a voltage difference between the substrate and cantilever arm is adjustable to tune a deflection of the cantilever arm.
14. The apparatus of claim 3 , a voltage difference between the substrate and cantilever arm is adjustable to tune a deflection of the cantilever arm.
15. The apparatus of claim 1 , the canti-lever arm apparatus comprising a base, a canti-lever arm, and an active head.
16. The apparatus of claim 15 , the width of the cantilever arm is 5 to 10 microns.
17. The apparatus of claim 15 , the active head comprising reflective layers.
18. The apparatus of claim 15 , the length of the cantilever arm is 100 to 500 microns.
19. The apparatus of claim 15 , the active head has a diameter between 10 and 40 microns.