Method of manufacturing semiconductor device, semiconductor device, circuit board, and electronic instrument
A method of manufacturing a semiconductor device uses a substrate on which an interconnect pattern is formed and on which a protective film is formed to include an opening and to cover the interconnect pattern in a region other than the opening. The method includes: attaching an adhesive sheet to an area including the opening and a boundary between the opening and the protective film so that a void is formed due to a level difference between the interconnect pattern and the substrate; softening the adhesive sheet by heating; and causing a semiconductor chip to adhere to the substrate through the adhesive sheet. The protective film includes a groove which connects with the opening, the adhesive sheet is attached except a part of the groove, and the void is discharged through the groove by heating and softening the adhesive sheet.
1. A method of manufacturing a semiconductor device using a substrate on which an interconnect pattern is formed and on which a protective film is formed to include a rectangular opening and to cover the interconnect pattern in a region other than the opening, the method comprising:
attaching an adhesive sheet to an area including the opening and a boundary between the opening and the protective film so that a void is formed in the opening due to a level difference between the interconnect pattern and the substrate;
softening the adhesive sheet by heating; and
causing a semiconductor chip to adhere to the substrate through the adhesive sheet,
wherein the protective film includes a groove which connects with a corner of the opening,
wherein the adhesive sheet is attached except at least a part of the groove, a plurality of cuts are formed on an end of the adhesive sheet and
wherein the void is discharged through the groove by heating and softening the adhesive sheet.
2. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein the adhesive sheet is a porous adhesive sheet which allows the void to be discharged.
3. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein the cuts are formed to reach the boundary between the opening and the protective film.
4. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein conductive particles are dispersed in the adhesive sheet, and
wherein the interconnect pattern and an electrode of the semiconductor chip are electrically connected through the conductive particles.
5. A method of manufacturing a semiconductor device using a substrate on which an interconnect pattern is formed and on which a protective film is formed to include a rectangular opening and to cover the interconnect pattern in a region other than the opening, the method comprising:
attaching an adhesive sheet to an area including the opening and a boundary between the opening and the protective film so that a void is formed in the opening due to a level difference between the interconnect pattern and the substrate;
softening the adhesive sheet by heating; and
causing a semiconductor chip to adhere to the substrate through the adhesive sheet,
wherein the protective film includes a groove which connects with a corner of the opening,
wherein the adhesive sheet is attached except at least a part of the groove, the adhesive sheet is an insulating sheet, and
wherein the void is discharged through the groove by heating and softening the adhesive sheet.
6. A method of manufacturing a semiconductor device using a substrate on which an interconnect pattern is formed and on which a protective film is formed to include a rectangular opening and to cover the interconnect pattern in a region other than the opening, the method comprising:
attaching a porous adhesive sheet to an area including the opening and a boundary between the opening and the protective film so that a void is formed in the opening due to a level difference between the interconnect pattern and the substrate;
softening the adhesive sheet by heating and discharging the void through the porous adhesive sheet;
forming a plurality of cuts on an end of the adhesive sheet; and
causing a semiconductor device to adhere to the substrate through the adhesive sheet.
7. The method of manufacturing a semiconductor device as defined in claim 6 ,
wherein the cuts are formed to reach the boundary between the opening and the protective film.
8. The method of manufacturing a semiconductor device as defined in claim 6 ,
wherein conductive particles are dispersed in the adhesive sheet, and
wherein the interconnect pattern and an electrode of the semiconductor chip are electrically connected through the conductive particles.
9. The method of manufacturing a semiconductor device as defined in claim 6 , wherein the adhesive sheet is an insulating sheet.
10. A semiconductor device manufactured by the method as defined in claim 1 .
11. A semiconductor device manufactured by the method as defined in claim 6 .
12. A circuit board having the semiconductor device as defined in claim 10 mounted on the circuit board.
13. A circuit board having the semiconductor device as defined in claim 11 mounted on the circuit board.
14. Electronic instrument having the semiconductor device as defined in claim 10 .
15. Electronic instrument having the semiconductor device as defined in claim 11 .