CSP semiconductor device having signal and radiation bump groups
View Patent ↗A semiconductor device comprises a semiconductor chip which has a first surface, a pad which is formed directly on the first surface, an oxide film which is formed on the first surface, an insulating film which is formed on the oxide film and a part of the pad, a conductive film which is formed on the insulating film and the pad, a sealing material which covers a part of the conductive film and the insulating film and a bump which is formed over the conductive film, wherein the bump is exposed from a surface of the sealing material.
1. A CSP type semiconductor device, comprising:
a semiconductor chip having a main surface on which a circuit is formed and a back surface opposite to the main surface, wherein the back surface has a first edge, a second edge opposite the first edge, and a plurality of grooves extending from the first edge to the second edge;
a pad which is formed on the main surface of the semiconductor chip;
an oxide film which is formed on the main surface of the semiconductor chip, wherein the oxide film has a main surface and a back surface facing to the main surface of the semiconductor chip;
an insulating film which is formed on the main surface of the oxide film and a part of the pad;
a conductive film which is formed on the insulating film and the pad;
a sealing material which covers the insulating film and a part of conductive film; and
a first bump which is formed over the insulating film, wherein the first bump is exposed from the sealing material.
2. The CSP type semiconductor device according to claim 1 , further comprising a second bump being formed between the insulating film and the first bump.
3. The CSP type semiconductor device according to claim 1 , wherein the grooves are V-shaped.
4. The CSP type semiconductor device according to claim 1 , wherein the grooves are U-shaped.
5. The CSP type semiconductor device according to claim 1 , wherein the pad is formed directly on the main surface of the semiconductor chip.
6. The CSP type semiconductor device according to claim 1 , wherein the grooves are parallel.
7. The CSP type semiconductor device according to claim 6 , wherein the grooves are substantially evenly spaced across the entire back surface.
8. The CSP type semiconductor device according to claim 1 , wherein the grooves are arranged in a grid.
9. A semiconductor device, comprising:
a semiconductor chip having a main surface on which a circuit is formed and a back surface opposite to the main surface, wherein the back surface has a first edge, a second edge opposite the first edge, and a plurality of grooves extending from the first edge to the second edge;
a pad which is formed on the main surface of the semiconductor chip; and
an oxide film which is formed on the main surface of the semiconductor chip.
10. The semiconductor device according to claim 9 , further comprising a bump which is formed over the main surface of the semiconductor chip.
11. The semiconductor device according to claim 9 , wherein the grooves are V-shaped.
12. The semiconductor device according to claim 9 , wherein the grooves are U-shaped.
13. The semiconductor device according to claim 9 , wherein the pad is formed directly on the main surface of the semiconductor chip.
14. The semiconductor device according to claim 9 , wherein the grooves are parallel.
15. The semiconductor device according to claim 14 , wherein the grooves are substantially evenly spaced across the entire back surface.
16. The semiconductor device according to claim 9 , wherein the grooves are arranged in a grid.