Nonvolatile memory device including circuit formed of thin film transistors
View Patent ↗A transistor is arranged for electrically isolating a sense amplifier formed of a thin film transistor from a data line electrically coupled to the sense amplifier. When a write driver drives the data line, a control signal is applied to isolate the data line from the sense amplifier.
1. A nonvolatile memory device comprising:
a memory array having a plurality of memory cells arranged in rows and columns;
a plurality of source lines each provided corresponding to a predetermined number of the memory cell rows in said memory array; and
a plurality of driver transistors provided corresponding to ends on one side of said plurality of source lines, and each being responsive to a control signal to couple electrically a fixed voltage to the corresponding source line, wherein
said memory array is divided into first and second memory blocks in the row direction, and
said plurality of source lines included in a first group and electrically coupled to the memory cells in said first memory block are different in number from the plurality of source lines included in a second group and electrically coupled to the memory cells in said second memory block.
2. The nonvolatile memory device according to claim 1 , wherein
said first memory block is located near said plurality of driver transistors provided corresponding to ends on one side of said plurality of source lines and said second memory block is located remote from said plurality of driver transistors, and
said source lines included in said first group corresponding to said first memory block are smaller in number than said source lines included in said second group corresponding to said second memory block.
3. The nonvolatile memory device according to claim 2 , wherein
a line width of said source line in said second group is larger than a line width of said source line in said first group.
4. The nonvolatile memory device according to claim 1 , wherein
said control signal has the same voltage level as a boosted voltage applied to said memory cell in said data read operation.