IP Library Granted Patent US 7,905,569
Granted Patent B2
US 7,905,569 · App. 10/941,493 · Granted Mar 15, 2011

Planarization layer for micro-fluid ejection head substrates

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Quick Facts
Patent No.
US 7,905,569
App. No.
10/941,493
Granted
Mar 15, 2011
Kind
B2
Abstract

A substantially inorganic planarization layer for a micro-fluid ejection head substrate and method therefor. The planarization layer includes a plurality of layers composed of one or more dielectric compounds and at least one spin on glass (SOG) layer having a total thickness ranging from about 1 microns to about 15 microns deposited over a second metal layer of the micro-fluid ejection head substrate. A top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.

Claims (12)

1. A substantially inorganic planarization layer for a micro-fluid ejection head substrate to which another surface is attached to provide a micro-fluid ejection head comprising a plurality of layers composed of one or more dielectric compounds and no more than one spin on glass (SOG) layer, the planarization layer having a thickness ranging from about 1 microns to about 15microns and being deposited over a second metal layer of the micro-fluid ejection head substrate, wherein a top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.

2. The planarization layer of claim 1 , wherein the one or more dielectric compounds are selected from the group consisting of silicon oxide, silicon carbide, silicon nitride, and diamond like carbon (DLC).

3. The planarization layer of claim 1 , wherein the planarization layer further comprises a passivation layer.

4. The planarization layer of claim 1 , wherein the top most layer comprises a hard mask material.

5. The planarization layer of claim 1 , wherein the plurality of layers comprises a single layer of SOG between layers of dielectric compounds.

6. The planarization layer of claim 1 , further comprising flow features etched therein for the micro fluid ejection head substrate.

7. A substantially inorganic planarization layer for a micro-fluid ejection head substrate to which another surface is attached to provide a micro-fluid ejection head comprising a plurality of layers deposited over a second metal layer of the micro-fluid ejection head substrate, the plurality of layers being composed of one or more dielectric compounds and no more than one spin on glass (SOG) layer, the planarization layer having etched therein at least a portion of a flow feature selected from the group consisting of a fluid flow channel and a fluid ejection chamber, wherein a top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.

8. The planarization layer of claim 7 , wherein the one or more dielectric compounds are selected from the group consisting of silicon oxide, silicon carbide, silicon nitride, and diamond like carbon (DLC).

9. The planarization layer of claim 7 , wherein the planarization layer further comprises a passivation layer.

10. The planarization layer of claim 7 , wherein the top most layer comprises a hard mask material.

11. The planarization layer of claim 7 , wherein the plurality of layers comprises a single layer of SOG between layers of dielectric compounds.

12. The planarization layer of claim 7 , wherein the planarization layer has a thickness ranging from about 1 to about 15 microns.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2025
From: FUNAI ELECTRIC CO., LTD.
To: BRADY WORLDWIDE, INC.
Reel/Frame 070724/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2013
From: LEXMARK INTERNATIONAL, INC.; LEXMARK INTERNATIONAL TECHNOLOGY, S.A.
To: FUNAI ELECTRIC CO., LTD
Reel/Frame 030416/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2004
From: BELL, BYRON V.; BERTELSEN, CRAIG M.; HART, BRIAN C.; PATIL, GIRISH S.; WEAVER, SEAN T.
To: LEXMARK INTERNATIONAL, INC.
Reel/Frame 015806/0975 →