Rotationally-vibrated unidirectional solidification crystal growth system and its method
View Patent ↗A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isolation portion and a low temperature portion. The crucible connected to the rotational-vibration device within the furnace has a seed well down to a crystal growth arena. The crystal is grown as the ambient temperature profile moving from high to low, which can be achieved through a relative movement between the furnace and the crucible. That is either the furnace or the crucible is undergoing a top-down movement. The rotational-vibration device offers the crucible the required rotation and angular vibration, with a vibrating frequency no less than 0.2 Hz.
1. A rotationally-vibrated unidirectional solidification crystal growth system, comprising:
a furnace, for providing different ambient temperatures;
a crucible, being disposed in said furnace; and
a rotational vibrating apparatus, being coupled with said crucible for rotating and vibrating said crucible alternatively in clockwise and counterclockwise directions.
2. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said furnace further comprises a high temperature portion and a low temperature portion, and said high temperature portion provides a high temperature status and said low temperature portion provides a low temperature status, and said high temperature status provides a temperature higher than the melting point of a raw material, and said low temperature status provides a temperature lower than the melting point of said raw material, and thus providing a different ambient temperature.
3. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said crucible comprises a seed well and a crystal growth arena, and said seed well is capable of accommodating a seed, and said crystal growth arena is capable of accommodating a raw material and a doping distributed in said raw material.
4. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said crucible further comprises a crucible axle working with said rotational vibrating apparatus for achieving a stable rotation and vibration effect.
5. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein the system further comprises at least one bearing disposed at an end of said crucible for vibrating said crucible substantially in the rotation direction in said furnace.
6. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said rotational vibrating apparatus has a vibrating frequency no less than 0.2 Hertz.
7. The rotationally-vibrated unidirectional solidification crystal growth system of claim 2 , wherein said furnace further comprises a thermal isolating portion being disposed between said high temperature portion and said low temperature portion for isolating a temperature difference between said high temperature portion and said low temperature portion.
8. The rotationally-vibrated unidirectional solidification crystal growth system of claim 2 , wherein said crucible is capable of moving vertically for facilitating said crucible to rotate and vibrate from said high temperature portion to said low temperature portion in said furnace.
9. The rotationally-vibrated unidirectional solidification crystal growth system of claim 2 , wherein said furnace is capable of moving vertically for facilitating said crucible to rotate and vibrate from said high temperature portion to said low temperature portion in said furnace.
10. The rotationally-vibrated unidirectional solidification crystal growth system of claim 2 , wherein said raw material is one selected from the collection of an organic matter, an oxide, a superconductor, a metal and a semiconductor.
11. The rotationally-vibrated unidirectional solidification crystal growth system of claim 3 , wherein said raw material is one selected from the collection of an organic matter, an oxide, a superconductor, a metal and a semiconductor.
12. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said rotational vibrating apparatus is disposed above said crucible.
13. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said rotational vibrating apparatus is disposed below said crucible.
14. The rotationally-vibrated unidirectional solidification crystal growth system of claim 1 , wherein said crucible is disposed in said furnace.