Semiconductor device and method for manufacturing thereof
View Patent ↗A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
1. A semiconductor device comprising:
a first semiconductor domain and a second semiconductor domain isolated from each other by a field dielectric layer for device isolation formed selectively on a surface of a silicon semiconductor substrate;
a first MOS (Metal Oxide Semiconductor) device having a nitrogen-containing silicon oxide film formed on a surface of the first semiconductor domain as a gate dielectric; and
a second MOS device having an oxygen-containing silicon nitride film formed on a surface of the second semiconductor domain as a gate dielectric, the oxygen-containing silicon nitride film being formed from a silicon nitride film having a thickness of 1.5 nm or less and into which oxygen is introduced to provide an equivalent oxide thickness of 2.5 nm or less,
wherein the nitrogen concentration in the nitrogen-containing silicon oxide film is maximum either at a surface of the silicon oxide film or at a boundary between the silicon oxide film and the silicon semiconductor substrate, and the oxygen concentration of the oxygen-containing silicon nitride film is minimum in a portion of the oxygen-containing silicon nitride film intermediate a surface of the oxygen-containing silicon nitride film and boundary between the oxygen-containing silicon nitride film and the silicon semiconductor substrate.