Method of manufacturing a semiconductor device having an alignment mark
View Patent ↗A method of manufacturing a semiconductor device includes providing a substrate and forming a projecting alignment mark. The substrate includes an insulating layer and a semiconductor layer on the insulating layer, and the substrate includes device areas and a scribe line area which surrounds the device area in the semiconductor layer. The projecting alignment mark is formed on the scribe line area.
1. A method manufacturing a semiconductor device comprising:
providing a substrate which has an insulating layer and a semiconductor layer on the insulating layer, wherein the substrate has a device area and a scribe line area which surrounds the device area in the semiconductor layer; and
forming a projecting alignment mark on the scribe line area, said forming a projection alignment mark comprising
forming a silicon dioxide layer on the semiconductor layer,
removing a portion of the silicon dioxide layer to form a window that exposes the semiconductor layer at the scribe line area,
forming an alignment mark layer in the window, and
patterning the alignment mark layer into a frame-shaped portion, wherein the alignment mark layer is made by an epitaxial growth method.
2. The method of claim 1 , wherein the alignment mark layer is made of silicon.
3. The method of claim 1 , wherein the alignment mark layer is made of poly crystalline silicon.
4. The method of claim 1 , further comprising oxidizing the semiconductor layer which is adjacent to the projecting alignment mark.
5. The method of claim 4 , wherein said oxidizing the semiconductor layer forms an isolating layer.
6. A method manufacturing a semiconductor device comprising:
providing a substrate which has an insulating layer and a semiconductor layer on the insulating layer, wherein the substrate has a device area and a scribe line area which surrounds the device area in the semiconductor layer; and
forming a projecting alignment mark on the scribe line area, said forming a projecting alignment mark comprising
forming a silicon dioxide layer on the semiconductor layer,
removing a portion of the silicon dioxide layer to form a window that exposes the semiconductor layer at the scribe line area,
forming an alignment mark layer in the window by an epitaxial growth method,
patterning the alignment mark layer into a frame-shaped portion,
forming a second silicon dioxide layer on the alignment mark,
forming a silicon nitride layer on the second silicon dioxide layer,
removing portions of the silicon nitride layer within the scribe line area adjacent the frame-shaped portion and within peripheral areas of the device area to form openings, and
oxidizing portions of semiconductor layer through the openings.
7. The method of claim 6 , wherein the alignment mark layer is made of silicon.
8. The method of claim 6 , wherein the alignment mark layer is made of poly crystalline silicon.
9. The method of claim 6 , wherein said oxidizing the semiconductor layer forms an isolating layer.