Laser apparatus in which GaN-based compound surface-emitting semiconductor element is excited with GaN-based compound semiconductor laser element
A laser apparatus includes a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light; and a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with the first laser light, and emitting second laser light. In addition, the surface-emitting semiconductor element may have a first mirror arranged on one side of the second active layer, and a second mirror may be arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator.
1 .- 9 . (canceled)
10 . A laser apparatus comprising:
a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;
a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and
at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,
said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.
11 . A laser apparatus according to claim 10 , wherein said second active layer includes a plurality of quantum wells.
12 . A laser apparatus according to claim 11 , wherein said second active layer includes twenty or more quantum wells.
13 . A laser apparatus according to claim 10 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.
14 . A laser apparatus according to claim 13 , wherein said second active layer includes a plurality of quantum wells.
15 . A laser apparatus according to claim 14 , wherein said second active layer includes twenty or more quantum wells.
16 . A laser apparatus according to claim 10 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.
17 . A laser apparatus according to claim 16 , wherein said second active layer includes a plurality of quantum wells.
18 . A laser apparatus according to claim 17 , wherein said second active layer includes twenty or more quantum wells.
19 . A laser apparatus comprising:
a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;
a surface-emitting semiconductor element having a second active layer made of a GaN-based compound, being excited with said first laser light, and emitting second laser light, and
at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,
said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.
20 . A laser apparatus according to claim 19 , wherein said second active layer includes a plurality of quantum wells.
21 . A laser apparatus according to claim 20 , wherein said second active layer includes twenty or more quantum wells.
22 . A laser apparatus according to claim 19 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.
23 . A laser apparatus according to claim 22 , wherein said second active layer includes a plurality of quantum wells.
24 . A laser apparatus according to claim 23 , wherein said second active layer includes twenty or more quantum wells.
25 . A laser apparatus according to claim 19 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.
26 . A laser apparatus according to claim 25 , wherein said second active layer includes a plurality of quantum wells.
27 . A laser apparatus according to claim 26 , wherein said second active layer includes twenty or more quantum wells.
28 .- 36 . (canceled)
37 . A laser apparatus comprising:
a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;
a surface-emitting semiconductor element being excited with said first laser light, emits second laser light, and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;
a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and
at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,
said surface-emitting semiconductor element being excited with said third laser light together with said first laser light.
38 . A laser apparatus according to claim 37 , wherein said second active layer includes a plurality of quantum wells.
39 . A laser apparatus according to claim 38 , wherein said second active layer includes twenty or more quantum wells.
40 . A laser apparatus according to claim 37 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.
41 . A laser apparatus according to claim 40 , wherein said second active layer includes a plurality of quantum wells.
42 . A laser apparatus according to claim 41 , wherein said second active layer includes twenty or more quantum wells.
43 . A laser apparatus according to claim 37 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.
44 . A laser apparatus according to claim 43 , wherein said second active layer includes a plurality of quantum wells.
45 . A laser apparatus according to claim 44 , wherein said second active layer includes twenty or more quantum wells.
46 . A laser apparatus comprising:
a semiconductor laser element having a first active layer made of a GaN-based compound, and emitting first laser light;
a surface-emitting semiconductor element being excited with said first laser light, emits second laser light and having a second active layer made of a GaN-based compound and a first mirror arranged on one side of said second active layer;
a second mirror arranged outside of said surface-emitting semiconductor element so that said first and second mirrors form a resonator; and
at least one third semiconductor laser element, each having a third active layer made of a GaN-based compound, and emits third laser light,
said surface-emitting semiconductor element being excited with fourth laser light which is produced by polarization coupling of said first and third laser light.
47 . A laser apparatus according to claim 46 , wherein said second active layer includes a plurality of quantum wells.
48 . A laser apparatus according to claim 47 , wherein said second active layer includes twenty or more quantum wells.
49 . A laser apparatus according to claim 46 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of an InGaN material.
50 . A laser apparatus according to claim 49 , wherein said second active layer includes a plurality of quantum wells.
51 . A laser apparatus according to claim 50 , wherein said second active layer includes twenty or more quantum wells.
52 . A laser apparatus according to claim 46 , wherein said first active layer is made of an InGaN or GaN material, and said second active layer is made of a GaNAs or InGaNAs material.
53 . A laser apparatus according to claim 52 , wherein said second active layer includes a plurality of quantum wells.
54 . A laser apparatus according to claim 53 , wherein said second active layer includes twenty or more quantum wells.