Silicon blades for surgical and non-surgical use
View Patent ↗Ophthalmic surgical blades are manufactured from either a crystalline or polycrystalline material, preferably in the form of a wafer. The method comprises preparing the crystalline or polycrystalline wafers by mounting them and machining trenches into the wafers. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or polycrystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any bevel angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost. The ophthalmic surgical blades can be used for cataract and refractive surgical procedures, as well as microsurgical, biological and non-medical, non-biological purposes.
1. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a first blade profile in the wafer of crystalline material on its first side, wherein the first blade profile comprises a first facet that comprises a cutting edge of the at least one cutting device, and the first blade profile further comprises a second facet adjacent to the first facet;
machining a second blade profile in the wafer of crystalline material on its second side, wherein the second blade profile comprises a third facet that comprises, along with the first facet, the cutting edge of the at least one cutting device, and the second blade profile further comprises a fourth facet adjacent to the third facet; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first blade profile.
2. The method according to claim 1 , further comprising:
singulating the at least one etched crystalline material cutting device.
3. The method according to claim 1 , wherein the step of etching comprises:
forming a first included angle that comprises the first angle of the first bevel; and
forming a second included angle that comprises the second angle of the second bevel.
4. The method according to claim 1 , wherein the step of machining a first blade profile in the wafer of crystalline material on its first side comprises:
machining the first facet at a first angle; and
machining the second facet at a second angle.
5. The method according to claim 1 , wherein the step of machining a second blade profile in the wafer of crystalline material on its first side comprises:
machining the third facet at the first angle; and
machining the fourth facet at the second angle.
6. The method according to claim 1 , further comprising:
coating the first side of the machined wafer of crystalline material.
7. The method according to claim 6 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
8. The method according to claim 1 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
9. The method according to claim 8 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
10. The method according to claim 1 , wherein the crystalline material comprises silicon.
11. The method according to claim 1 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.
12. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a first variable blade profile in the wafer of crystalline material on its first side, wherein the first variable blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device;
machining a second variable blade profile in the wafer of crystalline material on its first side, wherein the second variable blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and varies from a first angle at an apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly opposite where the first blade profile ends;
machining a third variable blade profile in the wafer of crystalline material on its second side, wherein the third variable blade profile comprises a third facet that comprises the first cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the first cutting edge is formed by the machining of the third variable blade profile from the apex of the cutting device at a third angle with respect to a centerline of the cutting device to a point substantially directly underneath the point where the first variable blade profile ends;
machining a fourth variable blade profile in the wafer of crystalline material on its second side, wherein the fourth variable blade profile comprises a fourth facet that comprises the second cutting edge of the cutting device, and varies from a first angle at the apex of the cutting device to a second angle at a first distance from the apex of the cutting device, and wherein the second cutting edge is formed by the machining of the fourth variable blade profile from the apex of the cutting device at a third angle with respect to the centerline of the cutting device to a point substantially directly underneath the point where the second variable blade profile ends; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first variable blade profile.
13. The method according to claim 12 , further comprising:
singulating the at least one etched crystalline material cutting device.
14. The method according to claim 12 , further comprising:
coating the first side of the machined wafer of crystalline material.
15. The method according to claim 14 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
16. The method according to claim 12 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
17. The method according to claim 16 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
18. The method according to claim 12 , wherein the crystalline material comprises silicon.
19. The method according to claim 12 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.
20. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a first curved blade profile in the wafer of crystalline material on its first side, wherein the first curved blade profile comprises a first facet that comprises a first cutting edge of the cutting device, and wherein the first cutting edge is formed by the machining of the first blade profile from an apex of the cutting device at about a first angle with respect to a centerline of the cutting device for about a first distance;
machining a second curved blade profile in the wafer of crystalline material on its first side, wherein the second curved blade profile comprises a second facet that comprises a second cutting edge of the cutting device, and wherein the second cutting edge is formed by the machining of the first blade profile from the apex of the cutting device at about the first angle with respect to a centerline of the cutting device for about the first distance; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the at least first curved blade profile.
21. The method according to claim 20 , further comprising:
singulating the at least one etched crystalline material cutting device.
22. The method according to claim 20 , further comprising:
coating the first side of the machined wafer of crystalline material.
23. The method according to claim 22 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
24. The method according to claim 20 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
25. The method according to claim 24 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
26. The method according to claim 20 , wherein the crystalline material comprises silicon.
27. The method according to claim 20 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.
28. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a first bevel in the wafer of crystalline material on its first side, wherein the first bevel comprises a cutting edge of the at least one cutting device;
machining a second bevel in the wafer of crystalline material on its second side, wherein the second bevel comprises, along with the first bevel, the cutting edge of the at least one cutting device; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
29. The method according to claim 28 , further comprising:
singulating the at least one etched crystalline material cutting device.
30. The method according to claim 28 , further comprising:
coating the first side of the machined wafer of crystalline material.
31. The method according to claim 30 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
32. The method according to claim 28 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
33. The method according to claim 32 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
34. The method according to claim 28 , wherein the crystalline material comprises silicon.
35. The method according to claim 28 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.
36. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point and continues to a second point along an arc at a substantially constant radius for a first angular distance that is substantially circular; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
37. The method according to claim 36 , further comprising:
singulating the at least one etched crystalline material cutting device.
38. The method according to claim 36 , further comprising:
coating the first side of the machined wafer of crystalline material.
39. The method according to claim 38 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
40. The method according to claim 36 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
41. The method according to claim 40 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
42. The method according to claim 36 , wherein the crystalline material comprises silicon.
43. The method according to claim 36 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.
44. A method for manufacturing at least one cutting device from a wafer of crystalline material, comprising:
machining a bevel in the wafer of crystalline material on its first side, wherein the bevel comprises a cutting edge of the at least one cutting device, and wherein the machining begins at a first point that is at a first angle to a centerline of the cutting device, continues to a second point for a first distance in a linear fashion, then continues from the second point to a third point along an arc at a substantially constant radius for a first angular distance that is substantially circular to a third point, and continues from the third point to a fourth point at about the first angle for about the first distance in a linear fashion; and
etching the wafer of crystalline material to form the at least one cutting device;
wherein the etching comprises isotropically etching at least the first side of the crystalline material to form the at least one cutting device comprising at least a portion of the cutting edge.
45. The method according to claim 44 , further comprising:
singulating the at least one etched crystalline material cutting device.
46. The method according to claim 44 , further comprising:
coating the first side of the machined wafer of crystalline material.
47. The method according to claim 46 , wherein the coating step comprises:
coating the first side of the machined wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
48. The method according to claim 44 , further comprising:
coating the first side of the wafer of crystalline material after the step of machining the wafer of crystalline material; and
mounting the wafer of crystalline material on its first side prior to the step of etching.
49. The method according to claim 48 , wherein the coating step comprises:
coating the first side of the formed wafer of crystalline material with a layer of material selected from the group consisting of silicon nitride, titanium nitride, aluminum titanium nitride, silicon dioxide, silicon carbide, titanium carbide, boron nitride, and diamond-like-crystals.
50. The method according to claim 44 , wherein the crystalline material comprises silicon.
51. The method according to claim 44 , further comprising:
forming a conversion layer on the surface of the at least one cutting device.