Radiation image storage panel
View Patent ↗In a radiation image storage panel having a support, an underlayer, and a phosphor layer of a phosphor composed of a matrix compound and an activator and is formed on the underlayer by a gas phase-accumulation method, the underlayer consists essentially of the matrix compound and has a relative density lower than a relative density of the phosphor layer.
1. A radiation image storage panel, comprising a support, an underlayer, and a phosphor layer which comprises a phosphor in the form of columnar crystals composed of a matrix compound and an activator and which is formed on the underlayer by a gas phase-accumulation method, in which the underlayer consists essentially of the matrix compound in the form of columnar crystals or aggregates of spherical crystals and has a relative density in the range of 80% to 98% which is lower than a relative density of the phosphor layer.
2. The radiation image storage panel of claim 1 , wherein the underlayer has a thickness less than a thickness of the phosphor layer under the following condition:
0.01<thickness of underlayer/thickness of phosphor layer<0.5.
3. The radiation image storage panel of claim 1 , wherein the underlayer is formed on the support by a gas phase-accumulation method.
4. The radiation image storage panel of claim 1 , wherein the phosphor is an energy-storable phosphor.
5. The radiation image storage panel of claim 4 , wherein the energy-storable phosphor is a stimulable alkali metal halide phosphor represented by the formula (I):
M I X·aM II X′ 2 ·bM III X″ 3 :zA (I)
in which M I is at least one alkali metal selected from the group consisting of Li, Na, K, Rb and Cs; M II is at least one alkaline earth metal or divalent metal selected from the group consisting of Be, Mg, Ca, Sr, Ba, Ni, Cu, Zn and Cd; M III is at least one rare earth element or trivalent metal selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga and In; each of X, X′ and X″ is independently at least one halogen selected from the group consisting of F, Cl, Br and I; A is at least one rare earth element or metal selected from the group consisting of Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Mg, Cu and Bi; and a, b and z are numbers satisfying the conditions of 0≦a<0.5, 0≦b<0.5 and 0<z<1.0, respectively.
6. The radiation image storage panel of claim 5 , wherein M I is Cs, X is Br, A is Eu, and z is a number satisfying the condition of 1×10 −4 ≦z≦0.1.
7. The radiation image storage panel of claim 1 , wherein the underlayer has a thickness in the range of 10 to 250 μm.