Magnetic head spin valve structure with CoFeCu magnetic layer and ZnO
View Patent ↗A magnetic head that includes a spin valve sensor of the present invention which may be a CIP or CPP device. The sensor includes a free magnetic layer that is comprised of CoFeCu. In certain embodiments the free magnetic layer may also include a sublayer of NiFe. The CoFeCu free magnetic layer preferably includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %. The sensor may also include a cap layer of the present invention that is comprised of ZnO x /TaO x . The CoFeCu free magnetic layer of the present invention provides improved sensor performance characteristics of reduced coercivity and generally similar GMR as compared to the prior art. Where the ZnO x /TaO x cap layer is utilized, increased GMR is obtained. Thus a magnetic head of the present invention that includes both a CoFeCu free magnetic layer and a ZnO x /TaO x cap layer demonstrates reduced coercivity and increased GMR.
1. A magnetic head including a magnetic read sensor comprising:
a sensor structure including a plurality of thin film layers, including a free magnetic layer that is comprised of CoFeCu, and wherein said free magnetic layer farther includes a NiFe sublayer.
2. A magnetic head as described in claim 1 wherein said CoFeCu free magnetic layer includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %.
3. A magnetic head as described in claim 2 wherein said sensor structure includes a cap layer comprised of ZnO x /TaO x .
4. A magnetic head as described in claim 1 wherein said sensor structure further includes a cap layer comprised of ZnO x /TaO x .
5. A magnetic head as described in claim 4 wherein said ZnO x includes oxygen in the range of 40-55 at. %.
6. A magnetic head as described in claim 4 wherein said TaO x includes oxygen in the range of 50-75 at. %.
7. A magnetic head including a magnetic read sensor comprising:
a sensor structure including a cap layer comprised of ZnO x /TaO x .
8. A magnetic head as described in claim 7 wherein said ZnO x includes oxygen in the range of 40-55 at. %.
9. A magnetic head as described in claim 7 wherein said TaO x includes oxygen in the range of 50-75 at. %.
10. A magnetic head as described in claim 7 wherein said sensor structure further includes a free magnetic layer that is comprised of CoFeCu.
11. A magnetic head including a spin valve sensor comprising:
a magnetic shield layer (S 1 ) being fabricated above a substrate base;
a first electrical insulation layer (G 1 ) being fabricated above said S 1 layer;
a spin valve sensor structure being disposed above said G 1 layer;
wherein said spin valve sensor structure includes a free magnetic layer that is comprised of CoFeCu.
12. A magnetic head as described in claim 11 wherein said free magnetic layer further includes a NiFe sublayer.
13. A magnetic head as described in claim 11 wherein said CoFeCu free magnetic layer includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %.
14. A magnetic head as described in claim 13 wherein said free magnetic layer further includes an NiFe sublayer.
15. A magnetic head as described in claim 13 wherein said sensor structure includes a cap layer comprised of ZnO x /TaO x .
16. A magnetic head as described in claim 11 wherein said sensor structure further includes a cap layer comprised of ZnO x /TaO x .
17. A magnetic head including a tunnel valve sensor comprising:
a magnetic shield layer (S 1 ) being fabricated above a substrate base;
a tunnel valve sensor structure being disposed above said S 1 layer;
wherein said tunnel valve sensor structure includes a free magnetic layer that is comprised of CoFeCu.
18. A magnetic head as described in claim 17 wherein said free magnetic layer further includes a NiFe sublayer.
19. A magnetic head as described in claim 17 wherein said CoFeCu free magnetic layer includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %.
20. A magnetic head as described in claim 19 wherein said free magnetic layer further includes an NiFe sublayer.
21. A magnetic head as described in claim 19 wherein said sensor structure includes a cap layer comprised of ZnO x /TaO x .
22. A magnetic head as described in claim 17 wherein said sensor structure further includes a cap layer comprised of ZnO x /TaO x .
23. A hard disk drive, including at least one magnetic head having a read head portion comprising:
a magnetic shield layer (S 1 ) being fabricated above a substrate base;
a first electrical insulation layer (G 1 ) being fabricated above said S 1 layer;
a spin valve sensor structure being disposed above said G 1 layer;
wherein said spin valve sensor structure includes a free magnetic layer that is comprised of CoFeCu.
24. A hard disk drive as described in claim 23 wherein said free magnetic layer further includes a NiFe sublayer.
25. A hard disk drive as described in claim 23 wherein said CoFeCu free magnetic layer includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %.
26. A hard disk drive as described in claim 25 wherein said free magnetic layer further includes an NiFe sublayer.
27. A hard disk drive as described in claim 25 wherein said sensor structure includes a cap layer comprised of ZnO x /TaO x .
28. A hard disk drive as described in claim 23 wherein said sensor structure further includes a cap layer comprised of ZnO x /TaO x .
29. A hard disk drive, including at least one magnetic head having a read head portion comprising:
a magnetic shield layer (S 1 ) being fabricated above a substrate base;
a tunnel valve sensor structure being disposed above said S 1 layer;
wherein said tunnel valve sensor structure includes a free magnetic layer that is comprised of CoFeCu.
30. A hard disk drive as described in claim 29 wherein said free magnetic layer further includes a NiFe sublayer.
31. A hard disk drive as described in claim 29 wherein said CoFeCu free magnetic layer includes Fe in a range of 5-20 at. % and Cu in a range of 1-10 at. %.
32. A hard disk drive as described in claim 31 wherein said free magnetic layer further includes an NiFe sublayer.
33. A hard disk drive as described in claim 31 wherein said sensor structure includes a cap layer comprised of ZnO x /TaO x .
34. A hard disk drive as described in claim 29 wherein said sensor structure further includes a cap layer comprised of ZnO x /TaO x .