IP Library Granted Patent US 7,095,098
Granted Patent B2
US 7,095,098 · App. 10/946,184 · Granted Aug 22, 2006

Electrically isolated and thermally conductive double-sided pre-packaged component

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Quick Facts
Patent No.
US 7,095,098
App. No.
10/946,184
Granted
Aug 22, 2006
Kind
B2
Abstract

An electrically isolated and thermally conductive double-sided pre-packaged IC component, stamped lead members, drain pads, source pads, gate runner, and a MOSFET, IGBT, etc. are positioned between a pair of ceramic substrate members. Layers of solderable copper material are directly bonded to the inner and outer surfaces of the substrate members.

Claims (12)

1. A pre-packaged component device comprising:

a first non-conductive substrate member having an outer surface;

a second non-conductive substrate member having an outer surface, said first and second substrate members being formed from a ceramic material and disposed in a spaced, substantially parallel relationship, with said surfaces opposing one another;

a first layer of solderable electrically conductive copper material direct bonded to the outer surface of said first substrate member;

a second layer of solderable electrically conductive copper material direct bonded to the outer surface of said second substrate member;

lead members and a metal oxide semiconductor field effect transistor (MOSFET) positioned between said first and second non-conductive substrate members, said MOSFET having at least one gate, said lead members stamped from copper material during manufacture and comprising a gate pin, a drain member and a source member;

a drain pad positioned on an inside surface of said first non-conductive substrate member facing said second non-conductive substrate member;

a source pad and a gate runner positioned on an inside surface of said second non-conductive substrate member facing said first non-conductive substrate member.

2. The component device as recited in claim 1 wherein said component device is a high current, high power device.

3. The component device as recited in claim 1 wherein said component device is a power diode with no gate lead.

4. The component device as recited in claim 1 wherein said component devices carry higher current densities than conventional devices.

5. The component device as recited in claim 1 wherein said ceramic material is taken from the group consisting of alumina, aluminum nitride, silicon nitride, and beryllium oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2018
From: DELPHI TECHNOLOGIES, INC.
To: DELPHI TECHNOLOGIES IP LIMITED
Reel/Frame 045127/0546 →