Method for manufacturing magnetron coated substrates and magnetron sputter source
View Patent ↗Method for manufacturing magnetron coated substrates, in which along the target and on its backside pointing from the substrate, a magnet arrangement is present by which along the sputter surface of the target at least one closed loop of a tunnel shaped magnetron magnetic field is generated, characterized in that for setting the sputter rate distribution the distance of a part of the magnet arrangement to the backside of the target is changed.
1. A method for manufacturing magnetron coated substrates comprising:
providing in a vacuum recipient, a magnetron source comprising a stationary target arrangement with a sputter surface and a planar backside;
providing along the planar backside, a first magnet arrangement generating along said sputter surface a first closed loop of tunnel-shaped magnetron magnetic field eccentrically about an axis perpendicular to said planar backside, said first magnet arrangement having a first outer part and a first inner part, said first outer and first inner parts having pole surfaces extending along and pointing toward said planar backside;
providing along said planar backside, a second magnet arrangement for generating along said sputter surface a second closed loop of tunnel-shaped magnetron magnetic field, said second magnet arrangement having a second outer part and a second inner part, said second outer and second inner parts having pole surfaces extending along and pointing toward said planar backside;
said first magnet arrangement being nested within said second magnet arrangement;
providing a substrate opposite to and spaced from said sputter surface;
rotating said first inner and said first outer parts about said axis relative to said second outer and said second inner parts;
selectively moving only said first magnet arrangement linearly with respect to said second outer and said second inner parts, towards and away from said backside for varying a distance to said planar backside, while leaving positioning of the pole surfaces of said second outer and said second inner parts of said second magnet arrangement unmoved by said linear moving;
and sputter coating said substrate;
wherein said second magnet arrangement rotates independently relative to said first magnet arrangement.
2. The method of claim 1 , further comprising generating said first closed loop of tunnel-shaped magnetron magnetic field by said first inner part comprising a loop of magnets and by means of said first outer part comprising a loop of magnets.
3. The method of claim 1 , wherein said second magnet arrangement also comprises a second inner loop of magnets.
4. The method of claim 1 , wherein said second magnet arrangement comprises a second inner part of said second magnet arrangement.
5. The method of claim 1 , wherein said selective moving is controlled depending on operating time of said target arrangement.
6. The method of claim 1 , further comprising generating a second closed loop of tunnel-shaped magnetron magnetic field by said second outer part comprising a loop of magnets.
7. The method of claim 1 , further comprising generating said second closed loop of tunnel-shaped magnetron magnetic field eccentrically about a further axis perpendicular to said backside and rotating said second closed loop about said further axis.
8. The method of claim 7 , wherein said axis and said further axis are the same axes.
9. The method of claim 1 , further comprising monitoring a discharge voltage of said magnetron source, comparing said discharge voltage monitored with a desired value for said discharge voltage and performing said varying depending on a result of said comparing.
10. The method of claim 1 , further comprising providing said target arrangement of at least two zones of different target materials and controlling a ratio of said different materials deposited on said substrate, and performing said controlling comprising said varying.