Fabrication method for polycrystalline silicon thin film and apparatus using the same
View Patent ↗The present invention relates to a fabrication method for polycrystalline silicon thin film in which amorphous silicon is crystallized by laser using a mask having a mixed structure of laser transmission pattern group and laser non-transmission pattern group, wherein the mask comprises two or more of dot pattern groups in which the non-transmission pattern group is perpendicular to a scan directional axis, and the dot pattern groups are formed in a certain shape and comprise first non-transmission patterns that are not respectively arranged in a row in an axis direction perpendicular to the scan directional axis, and second non-transmission patterns that are formed in the same arrangement as the first non-transmission patterns, but are positioned in such a manner that the second non-transmission patterns are parallel to the first non-transmission patterns and vertical axis of the scan directional axis.
1. A method for fabricating polycrystalline silicon thin film out of amorphous silicon using laser, comprising:
using a mask having a laser transmission pattern group and a laser non-transmission pattern group; and
moving the mask, after laser irradiation, a certain distance,
wherein the laser non-transmission pattern group comprises two or more dot pattern groups formed perpendicular to a scan directional axis, and
wherein the dot pattern groups comprise:
first non-transmission patterns that are not arranged in a line in an axis direction perpendicular to the scan directional axis, and
second non-transmission patterns that are formed in a same arrangement as the first non-transmission patterns, but are positioned so that the second non-transmission patterns are parallel to an axis perpendicular to the first non-transmission patterns and the scan directional axis.
2. The method of claim 1 , wherein the dot pattern groups comprising the first non-transmission patterns and the second non-transmission patterns are formed in the same shape.
3. The method of claim 2 , wherein the shape is quadrilateral.
4. The method of claim 3 , wherein square shaped non-transmission patterns are formed between the dot pattern groups, in a direction perpendicular to the scan directional axis, in the first non-transmission patterns and the second non-transmission patterns.
5. The method of claim 1 , wherein lines of the dot pattern groups in a direction of the scan directional axis are formed by a same or different number of dots.
6. The method of claim 5 , wherein odd numbered lines of each dot pattern group consist of n dots or (n- 1 ) dots, and even numbered lines of each dot pattern group consist of (n- 1 ) dots or n dots.
7. The method of claim 6 , wherein n is 3 or more.
8. The method of claim 7 , wherein adjacent dot pattern groups are diagonally symmetrical to each other in the first non-transmission patterns and the second non-transmission patterns.
9. The method of claim 6 , wherein square shaped non-transmission patterns are formed between the dot pattern groups in a direction perpendicular to the scan directional axis in the first non-transmission patterns and the second non-transmission patterns.
10. The method of claim 1 , wherein the mask further comprises one or more of a same pattern as the first non-transmission pattern in a direction parallel to an axis perpendicular to the scan directional axis.
11. A method for fabricating polycrystalline silicon thin film out of amorphous silicon using laser, comprising:
using a mask having a laser transmission pattern group and a laser non-transmission pattern group; and
moving the mask, after laser irradiation, a certain distance,
wherein the laser non-transmission pattern group comprises two or more dot pattern groups formed perpendicular to a scan directional axis, and
wherein the dot pattern groups in the same laser non-transmission pattern group are not arranged in a line in an axis direction perpendicular to the scan directional axis, and are formed to be parallel to the dot pattern groups in a different laser non-transmission group in a direction of scan directional axis.
12. The method of claim 11 , wherein the dot pattern groups comprising a plurality of non-transmission patterns are formed in the same shape.
13. The method of claim 12 , wherein the shape is quadrilateral.
14. The method of claim 13 , wherein square shaped non-transmission patterns are formed between the dot pattern groups, in a direction perpendicular to the scan directional axis.
15. The method of claim 11 , wherein lines of the dot pattern groups in a direction of the scan directional axis are formed by a same or different number of dots.
16. The method of claim 15 , wherein odd numbered lines of each dot pattern group consist of n dots or (n- 1 ) dots, and even numbered lines of each dot pattern group consist of (n- 1 ) dots or n dots.
17. The method of claim 16 , wherein n is 3 or more.
18. The method of claim 17 , wherein adjacent dot pattern groups are diagonally symmetrical to each other.
19. The method of claim 16 , wherein square shaped non-transmission patterns are formed between the dot pattern groups in a direction perpendicular to the scan directional axis.