Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho
View Patent ↗A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho 3+ , Sm 3+ , Eu 3+ , Dy 3+ , Er 3+ , and Tb 3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5 S 2 to 5 I 7 , from 5 S 2 to 5 I 8 , from 4 G 5/2 to 6 H 5/2 , from 4 G 5/2 to 6 H 7/2 , from 4 F 3/2 to 6 H 11/2 , from 5 D 0 to 7 F 2 , from 4 F 9/2 to 6 H 13/2 , from 4 F 9/2 to 6 H 11/2 , from 4 S 3/2 to 4 I 15/2 , from 2 H 9/2 to 4 I 13/2 , and from 5 D 4 to 7 F 5 . The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.
1. A laser-diode-excited solid-state laser apparatus comprising:
a GaN-based compound laser diode which emits an excitation laser beam; and
a solid-state laser crystal which is doped with Tb 3+ , and emits a solid-state laser beam generated by a transition from 5 D 4 to 7 F 5 when the solid-state laser crystal is excited with said excitation laser beam,
wherein the solid-state laser crystal is a bulk structure YAG solid-state crystal;
the solid-state laser crystal includes a first coating disposed on a backward end surface of the solid-state crystal and a second coating disposed on a forward end surface of the solid-state laser crystal, which enable the solid-state crystal to emit the solid-state laser beam generated by the transition from 5 D 4 to 7 F 5 and
said solid-state laser crystal is doped with no rare-earth ion other than Tb 3+ .
2. A laser-diode-excited solid-state laser apparatus according to claim 1 , wherein said solid-state laser beam is in a wavelength range of 530 to 550 nm.
3. A laser-diode-excited solid-state laser apparatus according to claim 1 , wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials.
4. A fiber laser apparatus comprising:
a GaN-based compound laser diode which emits a first laser beam; and
an optical fiber which has a core doped with Tb 3+ , and emits a second laser beam generated by a transition from 5 D 4 to 7 F 5 when the optical fiber is excited with said first laser beams,
wherein the optical fiber includes a first coating disposed on a light entrance end surface of the optical fiber and a second coating disposed on a light exit end surface of the optical fiber, which enable the optical fiber to emit the second laser beam generated by the transition from 5 D 4 to 7 F 5 and
said solid-state laser crystal is doped with no rare-earth ion other than Tb 3+ .
5. A fiber laser apparatus according to claim 4 , wherein said second laser beam is in a wavelength range of 530 to 550 nm.
6. A fiber laser apparatus according to claim 4 , wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials.
7. A fiber laser amplifier comprising:
a GaN-based compound laser diode which emits an excitation laser beam; and
an optical fiber which has a core doped with Tb 3+ , and amplifies incident light which has a wavelength within a wavelength range of fluorescence generated by a transition from 5 D 4 to 7 F 5 when the optical fiber is excited with said excitation laser beam,
wherein the optical fiber includes a first coating disposed on a light entrance end surface of the optical fiber and a second coating disposed on a light exit end surface of the optical fiber, which enable the optical fiber to amplify the incident light having the wavelength within the wavelength range of fluorescence generated by the transition from 5D0 to 7F2; and
said solid-state laser crystal is doped with no rare-earth ion other than Tb 3+ .
8. A fiber laser amplifier according to claim 7 , wherein said fluorescence is in a wavelength range of 530 to 550 nm.
9. A fiber laser amplifier according to claim 7 , wherein said GaN-based compound laser diode has an active layer made of one of InGaN, InGaNAs, and GaNAs materials.