Method and apparatus for electrochemical processing
A method of electrochemically processing an article having a semi-insulating element and a conducting element comprises forming a conductive layer on the article, the conductive layer comprising at least a first region covering at least a portion of the semi-insulating element and a second region covering at least a portion of the conducting element; gripping with at least one conductive gripper a portion of the first region; submerging at least a portion of the second region in an electrolyte while keeping the conductive gripper out of said electrolyte; and conducting current through a circuit comprising the conducting element, the conductive layer, the conductive gripper, and an electrode submerged in the electrolyte. The conductive layer is preferably formed by diffusing a dopant from a vapor phase.
1 . A method of electrochemically processing an article comprising a conducting element positioned on a semi-insulating element, the method comprising:
forming a conductive layer on an article, said article comprising a semi-insulating element and a conducting element, said conductive layer comprising at least a first region and a second region, said first region covering at least a portion of said semi-insulating element, said second region covering at least a portion of said conducting element;
gripping with at least one conductive gripper a portion of said first region;
submerging at least a portion of said second region in an electrolyte while keeping said conductive gripper out of said electrolyte; and
conducting current through a circuit comprising said conducting element, said conductive layer, said conductive gripper, and an electrode submerged in said electrolyte.
2 . A method as recited in claim 1 , wherein said semi-insulating element has a substantially flat first surface and a substantially flat second surface, said first surface of said semi-insulating element being substantially parallel to said second surface of said semi-insulating element, and said conducting element is substantially flat and has a substantially flat first side and a substantially flat second side, said first side of said conducting element being substantially parallel to said second side of said conducting element, said first side of said conducting element being in contact with said second surface of said semi-insulating element.
3 . A method as recited in claim 1 , wherein said conductive layer completely surrounds said article.
4 . A method as recited in claim 1 , wherein said conductive layer is formed by diffusing a dopant from a vapor phase.
5 . A method as recited in claim 1 , wherein said article is submerged in said electrolyte to a depth where substantially an entirety of said conducting element is beneath a top surface of said electrolyte and substantially an entirety of said semi-insulating element is above said top surface of said electrolyte.