Manufacturing method for semiconductor device and semiconductor device
View Patent ↗A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.
1. A semiconductor device including a protrusion electrode for flip chip connection, comprising;
a semiconductor substrate;
electrodes formed on the semiconductor substrate, the electrodes being made of a metal;
a passivation film that covers the surface of the semiconductor substrate on which the electrodes are formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes;
a diffusion prevention plug that is formed in the vicinity of the opening of the passivation film, and that is electrically connected to the predetermined electrode;
a seed layer formed on and over the diffusion prevention plug, the seed layer being in contact with the passivation film; and
a protrusion electrode formed on the seed layer, wherein
a width of the protrusion electrode is greater than a width of the diffusion prevention plug.
the diffusion prevention plug is substantially completely covered by the seed layer so that the diffusion prevention plug is not exposed, and
the diffusion prevention plug is made of a metal material that prohibits an occurrence of diffusion between the metal forming the electrodes formed on the semiconductor substrate and a metal forming the protrusion electrode.