Method and apparatus having improved magnetic read head sensors

1. An synthetic or AP pinned layer in a GMR stack, comprising a cobalt-iron ternary alloy layer, wherein a third constituent of the cobalt-iron ternary alloy layer is selected from the group consisting of vanadium, chromium, molybdenum and tungsten , wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2×10 5 to about 4×10 5 .

2. A synthetic or AP pinned layer in a GMR stack, comprising:

a first pinned layer; an interlayer disposed over the first pinned layer; and

a second pinned layer disposed over the interlayer;

wherein the at least one of the first or second pinned layers comprises a cobalt-iron ternary alloy layer having a third constituent selected from the group consisting of vanadium, chromium, molybdenum and tungsten, wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2 ×10 5 to about 4×10 5 .

3. The synthetic or AP pinned layer of claim 2 , wherein the first pinned layer is adjacent to an antiferromagnetic layer.

4. The synthetic or AP pinned layer of claim 2 , wherein the interlayer comprises a ruthenium (Ru) layer.

5. A magnetic read head, comprising:

a high resistance AP pinned layer comprising a first cobalt-iron ternary alloy, the cobalt-iron ternary alloy comprising a constituent selected from the group consisting of vanadium, chromium, molybdenum and tungsten , wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2×10 5 to about 4×10 5 ;

an interlayer disposed over the first high resistance pinned layer;

a second bi-layer pinned layer, disposed over coupling layer, the second bi-layer layer comprising a cobalt-iron ternary alloy and a cobalt-iron binary alloy layer, the cobalt-iron ternary alloy further comprising a constituent selected to provide an increase in sheet resistance and magnetoelastic anisotropy over a cobalt-iron alloy layer;

a nonmagnetic conductive spacer layer disposed over the bi-layer pinned layer adjacent to the cobalt-iron layer; and

a free layer disposed over the nonmagnetic conductive spacer layer, the free layer having a magnetization that is free to rotate.

6. The magnetic read head of claim 5 , wherein the free layer comprises a laminated free layer of cobalt-iron (CoFe) and nickel-iron (NiFe) layers.

7. The magnetic read head of claim 5 , wherein the free layer comprises a free layer of cobalt-iron (CoFe).

8. The magnetic read head of claim 5 , wherein the non magnetic conductive spacer layer comprises a copper (Cu) layer.

9. The magnetic read head of claim 5 , wherein the interlayer comprises a ruthenium (Ru) layer.

10. A magnetic read head, comprising:

a high resistance AP pinned layer comprising a first cobalt-iron ternary alloy, the cobalt-iron ternary alloy comprising a constituent selected from the group consisting of vanadium, chromium, molybdenum and tungsten, wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2×10 5 to about 4×10 5 ;

an interlayer disposed over the first high resistance pinned layer;

a second pinned layer, disposed over coupling layer;

a nonmagnetic conductive spacer layer disposed over the second pinned layer;

and a free layer disposed over the nonmagnetic conductive spacer layer, the free layer having a magnetization that is free to rotate.

11. The magnetic read head of claim 10 , wherein the free layer comprises a laminated free layer of cobalt iron (Co-Fe) and nickel iron (Ni-Fe) layers.

12. The magnetic read head of claim 10 , wherein the free layer comprises a free layer of cobalt-iron (CoFe).

13. The magnetic read head of claim 10 , wherein the non -magnetic conductive spacer layer comprises a copper (Cu) layer.

14. The magnetic read head of claim 10 , wherein the interlayer comprises a ruthenium (Ru) layer.

15. A magnetic storage device, comprising:

a magnetic media for storing data thereon;

a motor, coupled to the magnetic media, for translating the magnetic media;

a transducer for reading and writing data on the magnetic media; and

an actuator, coupled to the transducer, for moving the transducer relative to the magnetic media;

wherein the transducer includes a read sensor comprising a pinned layer in a GMR stack comprising a cobalt-iron ternary alloy layer in at least an AP1 pinned layer, wherein a third constituent of the cobalt-iron ternary alloy layer is selected from the group consisting of vanadium, chromium, molybdenum and tungsten, wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2×10 5 to about 4×10 5 .

16. The magnetic storage device of claim 15 , wherein the pinned layer further comprises an interlayer disposed over the cobalt-iron ternary alloy layer and a bi-layer pinned layer disposed over the antiferromagnetic coupling layer.

17. A method for providing a magnetic read head sensor having high resistance AP layer, comprising: forming a pinned layer in a GMR stack using a cobalt-iron ternary alloy layer wherein a third constituent of the cobalt-iron ternary alloy layer is selected from the group consisting of vanadium, chromium, molybdenum and tungsten, wherein the amount of the third constituent of the cobalt-iron ternary alloy ranges from about 0.5 to about 7.0 atomic percent and the iron in the cobalt-iron ternary alloy ranges from about 10 to about 55 atomic percent, wherein a percentage of the third constituent of the cobalt-iron ternary alloy layer is selected to provide a magnetostriction ranging from about 2×10 5 to about 4×10 5 .