IP Library Granted Patent US 7,674,926
Granted Patent B1
US 7,674,926 · App. 10/956,714 · Granted Mar 9, 2010

Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions

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Quick Facts
Patent No.
US 7,674,926
App. No.
10/956,714
Granted
Mar 9, 2010
Kind
B1
Abstract

Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition.

Claims (40)

1. A compound of the formula (A n H z ) m (DR 1 3−m ) q , where n is an integer from 3 to 12, z is from (n−q) to (2n+2−q), m is an integer from 1 to 3, each of the n*m instances of A is independently Si or Ge, D is Sb, As, P or B, q is 1 or 2, and each of the (3−m)*q instances of R 1 is independently H, alkyl, aryl, aralkyl, or AR 2 3 , where R 2 is hydrogen, alkyl, aryl, aralkyl, or A p H 2p+1 (1≦p≦4); such that none of the covalent A—D bonds in said formula is in a cyclic ring, and when m=1 and A n H z is a group of the formula n-A n H 2n+2−q , then at most one of the (3−m) instances of R 1 is H.

2. The compound of claim 1 , wherein q is 1 and z is 2n±1.

3. The compound of claim 2 , wherein A n H z comprises a cyclic group of the formula A n H 2n−q .

4. The compound of claim 3 , wherein n is from 4 to 8.

5. The compound of claim 4 , wherein n is 5.

6. The compound of claim 1 , wherein A is Si.

7. The compound of claim 1 , wherein D is P or B.

8. The compound of claim 1 , wherein m is 1.

9. The compound of claim 8 , wherein a first R 1 is H, C 1 -C 6 alkyl, C 6 -C 12 aryl, SiH 3 , or Si(SiH 3 ) 3 , and a second R 1 is C 1 -C 6 alkyl, C 6 -C 12 aryl, SiH 3 , or Si(SiH 3 ) 3 .

10. The compound of claim 9 , wherein each R 1 is t-butyl, phenyl, SiH 3 or Si(SiH 3 ) 3 .

11. The compound of claim 1 , wherein each R 1 is t-butyl, phenyl, SiH 3 or Si(SiH 3 ) 3 .

12. A composition, comprising:

a) the compound of claim 1 ; and

b) a solvent in which said compound is soluble.

13. The composition of claim 12 , wherein A n H z comprises a cyclic group of the formula A n H 2n−q .

14. The composition of claim 12 , wherein n is 5.

15. The composition of claim 12 , wherein A is Si.

16. The composition of claim 12 , wherein D is P or B.

17. The composition of claim 12 , wherein m is 1.

18. The composition of claim 12 , wherein from 0.00001 to 50 vol % of said composition consists essentially of said compound.

19. The composition of claim 18 , wherein from 0.001 to 35 vol % of said composition consists essentially of said compound.

20. The composition of claim 19 , wherein from about 0.002 to 25 vol % of said composition consists essentially of said compound.

21. The composition of claim 12 , comprising a compound of the formula (A′H x ) k , where k is from 3 to 12, each of the k instances of x is 1 or 2, and each A′ is independently Si or Ge.

22. The composition of claim 21 , wherein from 0.00001 to 50 vol % of said composition consists essentially of said compound of the formula (A n H z ) m (DR 1 3−m ) q and from 0.5 to 99.999 vol % of said composition consists essentially of said compound of the formula (A′H x ) k .

23. The composition of claim 22 , wherein from 0.0001 to about 10 vol % of said composition consists essentially of said compound of the formula (A n H z ) m (DR 1 3−m ) q and from about 1 to 25 vol % of said composition consists essentially of said compound of the formula (A′H x ) k .

24. The composition of claim 12 , wherein said solvent is selected from the group consisting of alkanes, substituted alkanes, cycloalkanes, substituted cycloalkanes, arenes, substituted arenes, and (cyclic) siloxanes.

25. The composition of claim 24 , wherein said solvent is selected from the group consisting of C 5 -C 10 alkanes; C 1 -C 6 alkanes substituted with from 1 to 2n halogen or from 1 to n C 1 -C 4 alkoxy substituents; C 5 -C 10 monocycloalkanes; C 3 -C 8 monocycloalkanes substituted with from 1 to 2n C 1 -C 4 alkyl or halogen substituents or from 1 to n C 1 -C 4 alkoxy substituents; C 10 -C 14 polycycloalkanes and partially hydrogenated polycycloarenes; siloxanes of the formula (R 3 3 Si)(OSiR 3 2 ) r (OSiR 3 3 ), where r is from 0 to 4, and each R 3 is independently H, C 1 -C 6 alkyl, benzyl or phenyl substituted with from 0 to 3 C 1 -C 4 alkyl groups; cyclosiloxanes of the formula (SiR 4 2 O) q , where q is from 2 to 6, and each R 4 is independently H, C 1 -C 6 alkyl, benzyl or phenyl substituted with from 0 to 3 C 1 -C 4 alkyl groups; and C 3 -C 8 fluoroalkanes substituted with from 1 to (2t+2) fluorine atoms, where t is the number of carbon atoms in the selected solvent.

26. The composition of claim 25 , wherein said solvent is a C 5 -C 10 monocycloalkane or a C 10 -C 14 polycycloalkane.

27. A method of making the composition of claim 12 , comprising the steps of:

a) combining said compound with said solvent; and

b) mixing said compound and said solvent to form a solution of said compound in said solvent.

28. The method of claim 27 , wherein said solvent consists essentially of a member selected from the group consisting of C 5 -C 12 monocycloalkanes; C 3 -C 8 monocycloalkanes substituted with from 1 to 2n C 1 -C 4 alkyl or halogen substituents or from 1 to n C 1 -C 4 alkoxy substituents, where n is the number of carbon atoms in the cycloalkane ring; C 10 -C 14 polycycloalkanes and partially hydrogenated polycycloarenes; siloxanes of the formula (R 3 3 Si)(OSiR 3 2 ) r (OSiR 3 3 ), where r is from 0 to 4, and each R 3 is independently H, C 1 -C 6 alkyl, benzyl or phenyl substituted with from 0 to 3 C 1 -C 4 alkyl groups; cyclosiloxanes of the formula (SiR 4 2 O) q , where q is from 2 to 6, and each R 4 is independently H, C 1 -C 6 alkyl, benzyl or phenyl substituted with from 0 to 3 C 1 -C 4 alkyl groups; and C 3 -C 8 fluoroalkanes substituted with from 1 to (2t+2) fluorine atoms and that are liquid at ambient temperatures, where t is the number of carbon atoms in the fluoroalkane.

29. The method of claim 28 , wherein said solvent consists essentially of a C 5 -C 10 monocycloalkane or a C 10 -C 14 polycycloalkane.

30. The method of claim 27 , wherein from 0.00001 to 50 vol % of said composition consists essentially of said compound.

31. The method of claim 30 , wherein from 0.0001 to 25 vol % of said composition consists essentially of said compound.

32. The method of claim 27 , comprising combining said compound with a (cyclo)silane of the formula A′ k H j , where k is from 3 to 20, each of the k instances of A′ is independently Si or Ge, and j is from k to (2k+2).

33. The method of claim 32 , comprising combining said compound with a cyclosilane of the formula (A′H z ) k where k is from 3 to 12, each of the k instances of A′ is independently Si or Ge, and each of the k instances of z is independently 1 or 2.

34. The method of claim 33 , wherein from about 1 to 100 vol % of said composition consists essentially of said compound and said cyclosilane.

35. The method of claim 34 , wherein from 0.00001 to 50 vol % of said composition consists essentially of said compound and from 0.5 to 99.999 vol % of said composition consists essentially of said cyclosilane.

36. The method of claim 35 , wherein from 0.0001 to 35 wt. % of said composition consists essentially of said compound and from about 1 to 25 vol % of said composition consists essentially of said cyclosilane.

Assignments (4)
CHANGE OF NAME Recorded Aug 22, 2022
From: THIN FILM ELECTRONICS ASA
To: ENSURGE MICROPOWER ASA
Reel/Frame 061298/0249 →
SECURITY INTEREST Recorded Jun 9, 2020
From: THIN FILM ELECTRONICS, INC.; THIN FILM ELECTRONICS, ASA
To: UTICA LEASECO, LLC
Reel/Frame 053472/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2014
From: KOVIO, INC.
To: THIN FILM ELECTRONICS ASA
Reel/Frame 032126/0931 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 1, 2004
From: GUO, WENZHUO; DIOUMAEV, VLADIMIR K.; RIDLEY, BRENT; ZURCHER, FABIO; ROCKENBERGER, JOERG; CLEEVES, JAMES MONTAGUE
To: KOVIO, INC.
Reel/Frame 015869/0301 →