Capacitance detecting device
To provide a superior capacitance detecting device, a capacitance detecting device includes M row lines and N column lines that are arranged in a matrix, capacitance detecting elements provided at intersections therebetween, and power lines. The capacitance detecting element includes a signal detecting element and a signal amplifying element. The signal detecting element includes a capacitance detecting electrode, a capacitance detecting dielectric film, and a reference capacitor. The signal amplifying element is composed of a thin film semiconductor device having a gate electrode, a gate insulating film, and a semiconductor film, and an electrode of the reference capacitor is connected to the row line.
1. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
capacitance detecting elements arranged in a matrix of M rows and N columns; and
a power line to supply power to the respective capacitance detecting elements, each of the capacitance detecting elements having:
a) a signal detecting element to store electric charge corresponding to the capacitance;
b) a reset element to reset the electric charge stored in the signal detecting element; and
c) a signal amplifying element to amplify a signal corresponding to the electric charge stored in the signal detecting element,
the signal detecting element having a capacitance detecting electrode,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, and the drain electrode of the reset element being connected to each other,
wherein the gate electrode of the reset element is connected to a column line adjacent to a column line in which the capacitance detecting element having the reset element is positioned.
2. The capacitance detecting device according to claim 1 ,
when the reset element being in a switched-on state, the gate electrode of the signal amplifying element, the capacitance detecting electrode, and the power line being electrically connected to each other.
3. The capacitance detecting device according to claim 1 ,
the source electrode of the reset element being connected to the power line.
4. The capacitance detecting device according to claim 1 ,
when the capacitance detecting element is in a selected state, the source electrode of the thin film semiconductor device for signal amplification being electrically connected to the power line.
5. The capacitance detecting device according to claim 1 , further comprising:
output lines, when the capacitance detecting element is in the selected state, the drain electrode of the thin film semiconductor device for signal amplification being electrically connected to an output line.
6. The capacitance detecting device according to claim 1 ,
the signal amplifying element and the reset element being thin film semiconductor devices having the same conductivity type.
7. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
M row lines and N column lines arranged in a matrix of M rows and N columns;
capacitance detecting elements arranged at intersections of the row lines and the column lines; and
power lines,
each of the capacitance detecting elements having a signal detecting element, a signal amplifying element; and a reset element,
the signal detecting element having a capacitance detecting electrode and a capacitance detecting dielectric film,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode,
a ground potential being applied to the power line, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, and the drain electrode of the reset element being connected to each other,
wherein the gate electrode of the reset element is connected to a column line adjacent to a column line in which the capacitance detecting element having the reset element is positioned.
8. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
capacitance detecting elements arranged in a matrix of M rows and N columns; and
a plurality of power lines to supply power to the respective capacitance detecting elements, each of the capacitance detecting elements having:
a) a signal detecting element to store electric charge corresponding to the capacitance;
b) a reset element to reset the electric charge stored in the signal detecting element; and
c) a signal amplifying element to amplify a signal corresponding to the electric charge stored in the signal detecting element,
the signal detecting element including:
a1) a capacitance detecting electrode;
a2) a capacitance detecting dielectric film provided on the capacitance detecting electrode; and
a3) a reference capacitor, the reference capacitor having a first electrode, a second electrode, and a dielectric film provided between the first electrode and the second electrode,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, the second electrode of the reference capacitor, and the drain electrode of the reset element being connected to each other, wherein
the first electrode of the reference capacitor and a column line are connected to each other.
9. The capacitance detecting device according to claim 8 ,
when the reset element is in a switched-on state, the gate electrode of the signal amplifying element, the capacitance detecting electrode, and the second electrode of the reference capacitor being electrically connected to the power line.
10. The capacitance detecting device according to claim 8 ,
when the reset element is in the switched-on state, the first and second electrodes of the reference capacitor having the same potential.
11. The capacitance detecting device according to claim 8 ,
the source electrode of the reset element being connected to the power line.
12. The capacitance detecting device according to claim 8 ,
when the capacitance detecting element is in a selected state, the source electrode of the thin film semiconductor device for signal amplification being electrically connected to the power line.
13. The capacitance detecting device according to claim 8 , further comprising:
output lines, when the capacitance detecting element is in the selected state, the drain electrode of the thin film semiconductor device for signal amplification being electrically connected to an output line.
14. The capacitance detecting device according to claim 8 ,
the signal amplifying element and the reset element being thin film semiconductor devices of the same conductivity type.
15. The capacitance detecting device according to claim 8 ,
when a capacitance C R of the reference capacitor and a transistor capacitance C T of the thin film semiconductor device for signal amplification are defined by the following expressions:
C R =∈ 0 ·∈ R ·S R /t R
C T =∈ 0 ·∈ ox ·S T /t ox
where:
∈ 0 is a dielectric constant in vacuum;
S R (μm 2 ) is an electrode area of the reference capacitor;
t R (μm) is a thickness of the reference capacitor dielectric film;
∈ R is a relative dielectric constant of the dielectric film of the reference capacitor;
S T (μm 2 ) is an area of the gate electrode of the thin film semiconductor device for signal amplification;
t ox (μm) is a thickness of the gate insulating film; and
∈ ox is a relative dielectric constant of the gate insulating film, and
when a capacitance C D of the signal detecting element is defined by the following expression:
C D =∈ 0 ·∈ D ·S D /t D
where ∈ 0 is a dielectric constant in vacuum;
S D (μm 2 ) is an area of the capacitance detecting electrode;
t D (μm) is a thickness of the capacitance detecting dielectric film; and
∈ D is a relative dielectric constant of the capacitance detecting dielectric film,
the element capacitance C D being sufficiently larger than the sum of the reference capacitor capacitance C R and the transistor capacitance C T , that is, C R +C T .
16. The capacitance detecting device according to claim 15 ,
the capacitance detecting dielectric film being positioned on an uppermost surface of the capacitance detecting device.
17. The capacitance detecting device according to claim 8 ,
the target is not brought into contact with the capacitance detecting dielectric film, but is separated therefrom by a target distance t A , and
when a target capacitance C A is defined by the following equation:
C A =∈ 0 ·∈ A ·S D /t A
where ∈ 0 is a dielectric constant in vacuum;
∈ A is a relative dielectric constant of air; and
S D is an area of the capacitance detecting electrode,
the reference capacitor capacitance C R being substantially larger than the target capacitance C A .
18. The capacitance detecting device according to claim 8 ,
the capacitance detecting dielectric film being positioned on the uppermost surface of the capacitance detecting device;
when a reference capacitor capacitance C R and a transistor capacitance C T of the thin film semiconductor device for signal amplification are defined by the following expressions:
C R =∈ 0 ·∈ R ·S R /t R
C T =∈ 0 ·∈ ox ·S T /t ox
where ∈ 0 is a dielectric constant in vacuum;
S R (μm 2 ) is an electrode area of the reference capacitor;
t R (μm) is a thickness of the reference capacitor dielectric film;
∈ R is a relative dielectric constant of the reference capacitor dielectric film;
S T (μm 2 ) is an area of the gate electrode of the thin film semiconductor device for signal amplification;
t ox (μm) is a thickness of the gate insulating film; and
∈ 0 is a relative dielectric constant of the gate insulating film,
when an element capacitance C D of the signal detecting element is defined by the following expression:
C D =∈ 0 ·∈ D ·S D /t D
where ∈ 0 is a dielectric constant in vacuum;
S D (μm 2 ) is an area of the capacitance detecting electrode;
t D (μm) is a thickness of the capacitance detecting dielectric film; and
∈ D is a relative dielectric constant of the capacitance detecting dielectric film,
the element capacitance C D is sufficiently larger than the sum of the reference capacitor capacitance C R and the transistor capacitance C T , that is, C R +C T ; and
when a target capacitance C A is defined by the following expression:
C A =∈ 0 ·∈ A ·S D /t A
where ∈ 0 is a dielectric constant in vacuum;
∈ A is a relative dielectric constant of air;
t A is a distance between the target and the capacitance detecting dielectric film; and
S D is the area of the capacitance detecting electrode,
the reference capacitor capacitance C R being substantially larger than the target capacitance C A .
19. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
M row lines and N column lines arranged in a matrix of M rows and N columns;
capacitance detecting elements arranged at intersections of the row lines and the column lines; and
a power line,
each of the capacitance detecting elements having:
a signal detecting element;
a signal amplifying element; and
a reset element,
the signal detecting element having a capacitance detecting electrode, a capacitance detecting dielectric film, and a reference capacitor,
the reference capacitor having a first electrode, a dielectric film, and a second electrode,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode,
a ground potential being applied to the power lines, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, the second electrode of the reference capacitor, and the drain electrode of the reset element being connected to each other,
wherein the first electrode of the reference capacitor and a column line are connected to each other.
20. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
capacitance detecting elements arranged in a matrix of M rows and N columns; and
a plurality of power lines to supply power to the respective capacitance detecting elements, each of the capacitance detecting elements having:
a) a signal detecting element to store electric charge corresponding to the capacitance;
b) a reset element to reset the electric charge stored in the signal detecting element; and
c) a signal amplifying element to amplify a signal corresponding to the electric charge stored in the signal detecting element,
the signal detecting element including:
a1) a capacitance detecting electrode;
a2) a capacitance detecting dielectric film provided on the capacitance detecting electrode; and
a3) a reference capacitor, the reference capacitor having a first electrode, a second electrode, and a dielectric film provided between the first electrode and the second electrode,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, the second electrode of the reference capacitor, and the drain electrode of the reset element being connected to each other,
wherein the gate electrode of the reset element is connected to a column line adjacent to the column line in which the capacitance detecting element including the reset element is positioned.
21. A capacitance detecting device that reads surface contours of a target by detecting capacitance which changes according to a distance from the target, comprising:
M row lines and N column lines arranged in a matrix of M rows and N columns;
capacitance detecting elements arranged at intersections of the row lines and the column lines; and
a power line,
each of the capacitance detecting elements having:
a signal detecting element;
a signal amplifying element; and
a reset element,
the signal detecting element having a capacitance detecting electrode, a capacitance detecting dielectric film, and a reference capacitor,
the reference capacitor having a first electrode, a dielectric film, and a second electrode,
the signal amplifying element being composed of a thin film semiconductor device for signal amplification having a source electrode, a drain electrode, and a gate electrode,
the reset element being composed of a thin film semiconductor device for reset having a source electrode, a drain electrode, and a gate electrode,
a ground potential being applied to the power lines, and
the gate electrode of the signal amplifying element, the capacitance detecting electrode, the second electrode of the reference capacitor, and the drain electrode of the reset element being connected to each other,
wherein the gate electrode of the reset element being connected to a column line adjacent to the column line in which the capacitance detecting element including the reset element is positioned.