Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same
View Patent ↗A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high temperature and elevated pressure. A particular composition prepared by the methods is a passivated silicon nanoparticle composition displaying discrete optical transitions.
1. A nanocrystal, comprising:
a core containing a semiconductor material selected from the group consisting of Si and Ge;
a shell surrounding said core; and
at least one surface passivating agent coupled to said shell;
wherein said nanocrystal is substantially defect free such that said nanocrystal exhibits photoluminescence, wherein, if said nanocrystal has a core comprising silicon, then said nanocrystal has an average particle diameter of 20 to about 100 angstroms, and wherein said surface passivating agent is octanol.
2. The nanocrystal of claim 1 , wherein said nanocrystal has a core of Ge.
3. The nanocrystal of claim 1 , wherein said nanocrystal has a core of Si.
4. The nanocrystal of claim 1 , wherein said shell includes an oxide.
5. A composition, comprising:
a plurality of nanocrystals, said plurality of nanocrystals containing a semiconductor material selected from the group consisting of Si and Ge; and
at least one surface passivating agent coupled to said nanocrystal, wherein said surface passivating agent is octanol;
wherein at least one nanocrystal of said plurality of nanocrystals exhibits photoluminescence, and wherein, if said nanocrystals comprise Si, then said nanocrystals have an average particle diameter of 20 to about 100 Å.
6. The composition of claim 5 , wherein said nanocrystals comprise Si, and wherein said at least one nanocrystal which exhibits photoluminescence also exhibits a quantum yield as high as 23%.
7. The composition of claim 5 , wherein said plurality of Ge nanocrystals has a size between approximately 10 angstroms and 200 angstroms.
8. The composition of claim 5 , wherein said plurality of nanocrystals comprises a) a core including a semiconductor selected from the group consisting of Si and Ge and b) a shell surrounding said core.
9. The composition of claim 8 , wherein said shell includes an oxide.
10. The composition of claim 8 , wherein a) the core is Si and b) has a shell surrounding said core; said nanocrystal being substantially defect free such that said nanocrystal exhibits photoluminescence.
11. The nanocrystal of claim 10 , wherein said nanocrystal exhibits a quantum yield as high as 23% at room temperature.
12. The nanocrystal of claim 10 , wherein said shell includes an oxide.
13. The nanocrystal of claim 10 , wherein said at least one surface passivating agent is coupled to said shell.
14. The composition of claim 8 wherein said plurality of nanocrystals comprises a) a semiconductor material of Ge and b) a shell surrounding said core, wherein the nanocrystals have an average particle diameter of 10-200 Angstroms.
15. The composition of claim 14 , wherein at least one nanocrystal of said plurality of nanocrystals comprises Si and exhibits a photoluminescence quantum yield as high as 23%.
16. The composition of claim 14 , wherein said shell includes an oxide.