Polysulfide thermal vapour source for thin sulfide film deposition
The present invention is a low pressure physical vapor deposition method for the deposition of multi element sulfide thin film phosphor compositions for electroluminescent devices where a thermal source comprising a polysulfide compound provides the source of sulfur species for phosphor film deposition and/or annealing. The method is particularly useful for the deposition of phosphors for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.
1. A method of providing a sulfur species in a low pressure physical vapour deposition method for depositing a sulfur-bearing thin film phosphor composition onto a substrate in a deposition chamber, the method comprising:
heating a thermal source comprising a sulfide compound to volatize sulfur species into the deposition atmosphere during deposition of said thin film phosphor composition, wherein said sulfide compound is a polysulfide compound selected from disulfides and trisulfides of an alkaline earth element or said sulfur compound is a sulfur bearing compound wherein at least some of the contained sulfur is in an oxidation state equal or more negative than zero but greater than negative two.
2. The method of claim 1 , wherein said sulfur-bearing thin film phosphor composition is a ternary, quaternary or higher sulfur-bearing thin film phosphor compositions selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table.
3. The method of claim 2 , wherein said thin film composition is selected from the group consisting of an alkaline earth thiogallate, an alkaline earth thioaluminate and an alkaline earth thioindate.
4. The method of claim 3 , wherein said thin film composition is a barium thioaluminate.
5. The method of claim 1 , wherein said sulfide compound is heated in a closed chamber remote from said deposition chamber and said sulfur species is injected into the deposition chamber.
6. The method of claim 1 , wherein said sulfide compound is provided within said deposition chamber.
7. The method of claim 1 , wherein said sulfide compound is heated at a temperature of about 400° C. to about 600° C.
8. The method of claim 7 , wherein said temperature is about 500° C. to about 600° C.
9. The method of claim 7 , wherein said polysulfide compound is barium disulfide.
10. The method of claim 7 , wherein said method further comprises annealing the deposited thin film phosphor composition.
11. The method of claim 10 , wherein annealing is conducted by subjecting said deposited thin film phosphor composition to heating under an atmosphere comprising substantially pure sulfur volatized from a thermal source comprising a polysulfide compound.
12. The method of claim 10 , wherein annealing is done in said deposition chamber.
13. The method of claim 10 , wherein annealing is done in a separate annealing furnace.
14. The method of claim 1 , wherein said low pressure physical vapour deposition method is selected from thermal evaporation, electron beam evaporation and sputtering.
15. A low pressure physical vapour deposition process for the deposition of a thin film phosphor composition of an alkaline earth thiogallate, thioaluminate or thioindate, the method comprising to a deposition chamber containing one or more source materials that make up the thin film phosphor composition;
providing a vapour sulfur species generated by the heating and volatization of a sulfide compound, said vapour sulfur species providing a source of sulfur for said thin film phosphor composition; and
simultaneously volatizing the one or more source materials to effect the deposition of said thin film phosphor composition, wherein said sulfide compound is a polysulfide compound selected from disulfides and trisulfides of an alkaline earth element or said sulfur compound is a sulfur bearing compound wherein at least some of the contained sulfur is in an oxidation state equal or more negative than zero but greater than negative two.
16. The method of claim 15 , wherein said sulfide compound is heated in a closed chamber remote from said deposition chamber and said vapour sulfur species is injected into the deposition chamber.
17. The method of claim 15 , wherein said sulfide compound is provided within said deposition chamber.
18. The method of claim 15 , wherein said sulfide compound is incorporated into said one or more source materials that make up the thin film phosphor composition.
19. The method of claim 15 , wherein said sulfide compound is heated at a temperature of about 400° C. to about 600° C.
20. The method of claim 19 , wherein said temperature is about 500° C. to about 600° C.
21. The method of claim 19 , wherein said polysulfide compound is barium disulfide.
22. The method of claim 15 , wherein said low pressure physical vapour deposition process is selected from thermal evaporation, electron beam evaporation and sputtering.
23. The method of claim 15 , wherein said thin film composition is a barium thioaluminate.
24. The method of claim 15 , wherein said method further comprises annealing the deposited phosphor thin film composition.
25. The method of claim 24 , wherein annealing is conducted by subjecting said deposited thin film phosphor composition to heating under an atmosphere comprising substantially pure sulfur volatized from a thermal source comprising a polysulfide compound.
26. The method of claim 25 , wherein annealing is done in said deposition chamber.
27. The method of claim 25 , wherein annealing is done in a separate annealing furnace.
28. A method for annealing a deposited phosphor film composition, said phosphor film composition comprising compositions selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table, said method comprising;
subjecting said deposited phosphor film composition to heating under an atmosphere comprising substantially pure sulfur volatized from a thermal source comprising a sulfide compound, wherein said sulfide compound is a polysulfide compound selected from disulfides and trisulfides of an alkaline earth element or said sulfur compound is a sulfur bearing compound wherein at least some of the contained sulfur is in an oxidation state equal or more negative than zero but greater than negative two.
29. The method of claim 28 , wherein annealing is done in said deposition chamber.
30. The method of claim 28 , wherein annealing is done in a separate annealing furnace.
31. The method of claim 30 , wherein said thin film composition is a barium thioaluminate.
32. The method of claim 28 , wherein said polysulfide compound is barium disulfide.