Method for fabricating semiconductor integrated circuit device
View Patent ↗A method for fabricating a semiconductor integrated circuit device of the present invention forms an insulating film on a semiconductor wafer and forms a mask pattern containing a functional element or a wire on the formed insulating film. Dimensions of the mask pattern are changed in accordance with an amount of process variation occurring in the thickness or dielectric constant of the insulating film during the formation of the insulating film.
1. A method for fabricating a semiconductor integrated circuit device, the method comprising:
a first step of defining, on semiconductor wafer, first and second chip formation regions having different chip sizes in accordance with an amount of process variation caused in a thickness of an insulating film; and
a second step of forming functional element and a wire in each of the chip formation regions,
wherein the first chip formation region has a relatively large chip area and is placed in a portion where an amount of process variation is relatively small, and
the second chip formation region has a relatively small chip area and is placed in a portion where an amount of process variation is relatively large.
2. The method of claim 1 further comprising a step of forming a gate insulating film in the first chip formation region and in the second chip formation region respectively,
wherein the thickness of the gate insulating film in the second chip formation region is larger than the thickness of the gate insulating film in the first chip formation region.
3. The method of claim 1 , wherein the first chip formation region has a relatively large wiring length compared to the second chip formation region.
4. A method for fabricating a semiconductor integrated circuit device, the method comprising:
a first step of forming an insulating film on a semiconductor wafer having a plurality of chip formation regions; and
a second step of forming mask pattern containing a functional element or a wire on the insulating film and patterning the insulating film by using the formed mask pattern,
the second step including changing dimensions of the mask pattern in accordance with an amount of process variation caused in a thickness or dielectric constant of the insulating film by at least the first step, such that the dimensions of the mask pattern varies from one chip formation region to another.