Preparation of nanocrystallites
View Patent ↗A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.
1. A method of manufacturing a nanocrystal comprising heating a mixture including a coordinating solvent, an amine or a reducing agent, a chalcogen or pnictide source, and a metal-containing compound to form a nanocrystal, wherein the metal-containing compound is free of metal-carbon bonds.
2. The method of claim 1 , wherein the mixture includes a primary amine.
3. The method of claim 2 , wherein the primary amine is a C 8 –C 20 alkyl amine.
4. The method of claim 1 , wherein the mixture includes a 1,2-diol or an aldehyde.
5. The method of claim 4 , wherein the 1,2-diol is a C 6 –C 20 alkyl diol or the aldehyde is a C 6 –C 20 aldehyde.
6. The method of claim 1 , wherein the metal-containing compound includes a halide, carboxylate, carbonate, hydroxide, or diketonate.
7. The method of claim 1 , wherein the metal-containing compound includes a Group II metal or a Group III metal.
8. The method of claim 1 , wherein the metal-containing compound includes cadmium acetylacetonate, cadmium iodide, cadmium bromide, cadmium hydroxide, cadmium carbonate, cadmium acetate, zinc acetylacetonate, zinc iodide, zinc bromide, zinc hydroxide, zinc carbonate, zinc acetate, magnesium acetylacetonate, magnesium iodide, magnesium bromide, magnesium hydroxide, magnesium carbonate, magnesium acetate, mercury acetylacetonate, mercury iodide, mercury bromide, mercury hydroxide, mercury carbonate, mercury acetate, aluminum acetylacetonate, aluminum iodide, aluminum bromide, aluminum hydroxide, aluminum carbonate, aluminum acetate, gallium acetylacetonate, gallium iodide, gallium bromide, gallium hydroxide, gallium carbonate, gallium acetate, indium acetylacetonate, indium iodide, indium bromide, indium hydroxide, indium carbonate, indium acetate, thallium acetylacetonate, thallium iodide, thallium bromide, thallium hydroxide, thallium carbonate, or thallium acetate.
9. The method of claim 1 , wherein the mixture includes a C 8 –C 20 alkyl primary amine, a C 6 –C 20 alkyl 1,2-diol, and the metal-containing compound is a halide, carboxylate, carbonate, hydroxide, or diketonate.
10. The method of claim 1 , wherein the chalcogen or pnictide source includes a phosphine chalcogenide, a bis(silyl) chalcogenide, dioxygen, an ammonium salt, or a tris(silyl) pnictide.
11. The method of claim 1 , wherein the nanocrystal photoluminesces with a quantum efficiency of at least 10%.
12. The method of claim 1 , further comprising monitoring the size distribution of a population including of the nanocrystal.
13. The method of claim 12 , further comprising altering the temperature of the mixture in response to a change in the size distribution.
14. The method of claim 1 , wherein the nanocrystal has a particle size in the range of about 20 Å to about 125 Å.
15. The method of claim 1 , wherein the nanocrystal includes ZnS, ZnSe, CdS, CdSe, or mixtures thereof.
16. The method of claim 1 , further comprising exposing the nanocrystal to an organic compound having affinity for a surface of the nanocrystal.
17. The method of claim 1 , further comprising forming an overcoating of a semiconductor material on a surface of the nanocrystal.
18. The method of claim 1 , wherein the nanocrystal is a member of a substantially monodisperse core population.
19. The method of claim 18 , wherein the population emits light in a spectral range of no greater than about 75 nm full width at half max (FWHM).
20. The method of claim 18 , wherein the population exhibits less than a 15% rms deviation in diameter of the nanocrystal.
21. A method of manufacturing a nanocrystal, comprising:
contacting a metal, M, or an M-containing salt, M being Cd, Zn, Mg, Hg, Al, Ga, In, or Tl, an amine, and an X donor, X being O, S, Se, Te, N, P, As, or Sb to form a mixture; and
heating the mixture to form the nanocrystal.
22. The method of claim 21 , wherein the amine is a C 6 –C 20 primary amine and the M-containing salt includes a halide, carboxylate, carbonate, hydroxide, or diketonate.
23. The method of claim 21 , further comprising forming an overcoating of a semiconductor material on a surface of the nanocrystal.
24. The method of claim 21 , wherein the nanocrystal is a member of a substantially monodisperse core population.
25. The method of claim 24 , wherein the population exhibits less than a 15% rms deviation in diameter of the nanocrystal.