IP Library › Patent Application 10960534
Patent Application
App. No. 10/960,534

High-frequency semiconductor device

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
10/960,534
Abstract

A high-frequency semiconductor device is provided with a ceramic substrate, an element group including semiconductor elements and passive components mounted onto a bottom portion of the ceramic substrate, and a composite resin material layer formed on the bottom portion of the ceramic substrate so as to bury the element group. The composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and has a flat bottom surface on which electrodes for connecting to the outside are formed. As packaging of a structure in which the receiving system and the transmitting system are formed in a single unit, such as an RF module, the high-frequency semiconductor device achieves a small size, a high mounting density, and excellent heat release properties.

Claims (7)

1 .- 7 . (CANCELED)

8 . A high-frequency semiconductor element comprising:

a ceramic substrate having a cavity portion in its bottom portion;

an element group including semiconductor elements and passive components mounted to the bottom portion of the cavity portion;

a composite resin material layer formed so as to bury the element group in the cavity portion; and

electrodes for connecting to the outside that are formed on a bottom portion of the ceramic substrate other than at the cavity portion;

wherein the composite resin material layer is formed by a composite resin material including an epoxy resin and an inorganic filler material, and a bottom portion of the composite resin material layer is flat in shape.