Apparatus and method of fabricating thin film transistor array substrate

1. A method of fabricating a thin film transistor array substrate comprising:

forming gate patterns including a gate line and a gate electrode on a substrate;

forming a gate insulating layer on the substrate and the gate patterns;

forming source/drain patterns including a data line, a source electrode, a drain electrode and a storage electrode on the gate insulating;

depositing a passivation film on the gate insulating layer and the source/drain patterns;

forming a photo-resist pattern on the passivation film, and patterning the passivation film and the gate insulating layer using the photo-resist pattern as a mask to form a passivation film pattern and a gate insulating pattern so that a portion of the substrate is exposed;

depositing a transparent electrode material on the substrate and the photo-resist pattern; and

removing the photo-resist pattern and the transparent electrode material deposited on the photo-resist pattern to form a transparent pattern including a pixel electrode so that the transparent pattern is non-overlapped with the passivation film pattern,

wherein the removing the photo-resist pattern and the transparent electrode material including:

dipping the substrate having the photo-resist pattern and the transparent electrode material in a first stripper to remove the photo-resist pattern and the transparent electrode material;

removing a residual photo-resist pattern and a residual transparent electrode material left on the substrate by jetting air to the substrate by using an air knife after dipping the substrate in the first stripper; and

removing particles of the residual photo-resist pattern and the residual transparent electrode material left on the substrate by jetting a second stripper to the substrate by using a jet nozzle after removing the residual photo-resist pattern and the residual transparent electrode material.

2. The method according to claim 1 , wherein the jetting a second stripper includes jetting the second stripper at the temperature of at least approximately 70° C.

3. The method according to claim 1 , wherein the jetting a second stripper includes jetting the second stripper under a pressure of at least approximately 1 kg/cm 2 .