IP Library › Granted Patent US 7,125,605
Granted Patent B2
US 7,125,605 · App. 10/960,947 · Granted Oct 24, 2006

Highly luminescent color-selective nanocrystalline materials

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Quick Facts
Patent No.
US 7,125,605
App. No.
10/960,947
Granted
Oct 24, 2006
Kind
B2
Abstract

A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%.

Claims (30)

1. A population of coated nanocrystals each comprising a size-selected core including a first semiconductor material and an overcoating including a second semiconductor material, wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of greater than about 30%.

2. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of between about 30% and 50%.

3. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of greater than about 40%.

4. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of about 50%.

5. The population of coated nanocrystals of claim 1 , wherein the size-selected cores of the population of coated nanocrystals have diameters having no greater than 10% rms deviation.

6. The population of coated nanocrystals of claim 1 , wherein the size-selected cores of the population of coated nanocrystals have diameters having no greater than 5% rms deviation.

7. The population of coated nanocrystals of claim 1 , wherein the second semiconductor material is ZnS.

8. The population of coated nanocrystals of claim 7 , wherein the overcoating of ZnS includes one to two monolayers of ZnS.

9. The population of coated nanocrystals of claim 7 , wherein the overcoating of ZnS includes about 1.3 monolayers of ZnS.

10. The population of coated nanocrystals of claim 7 , wherein the overcoating of ZnS includes more than two monolayers of ZnS.

11. The population of coated nanocrystals of claim 1 , further comprising one or more organic layers on the outer surface of the population of coated nanocrystals.

12. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 60 nm full width at half max (FWHM) when irradiated.

13. The population of coated nanocrystals of claim 7 , wherein the first semiconductor material is selected from CdS, CdSe, CdTe, and mixtures thereof.

14. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.05 eV full width at half max (FWHM) when irradiated.

15. The population of coated nanocrystals of claim 1 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.03 eV full width at half max (FWHM) when irradiated.

16. A population of coated nanocrystals comprising a core including a first semiconductor material and an overcoating of ZnS, wherein the cores of the population of nanocrystals have diameters having no greater than 10% rms deviation.

17. The population of coated nanocrystals of claim 16 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of between about 30% and 50%.

18. The population of coated nanocrystals of claim 16 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of greater than about 40%.

19. The population of coated nanocrystals of claim 16 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of about 50%.

20. The population of coated nanocrystals of claim 16 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.05 eV full width at half max (FWHM) when irradiated.

21. The population of coated nanocrystals of claim 16 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.03 eV full width at half max (FWHM) when irradiated.

22. The population of coated nanocrystals of claim 16 , wherein the overcoating of ZnS includes one to two monolayers of ZnS.

23. The population of coated nanocrystals of claim 16 , wherein the overcoating of ZnS includes about 1.3 monolayers of ZnS.

24. The population of coated nanocrystals of claim 16 , wherein the overcoating of ZnS includes more than two monolayers of ZnS.

25. The population of coated nanocrystals of claim 16 , further comprising one or more organic layers on the outer surface of the coated nanocrystals.

26. A population of coated nanocrystals comprising a size-selected core including a first semiconductor material selected from CdS, CdSe, CdTe and an overcoating of ZnS.

27. A population of coated nanocrystals comprising a core including a first semiconductor material and an overcoating of ZnS, wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.05 eV at full width half max (FWHM) when irradiated.

28. The population of coated nanocrystals of claim 27 , wherein the population of coated nanocrystals emit light in a spectral range of no greater than about 0.03 eV at full width half max (FWHM) when irradiated.

29. The population of coated nanocrystals of claim 27 , wherein the cores are size-selected by size-selective precipitation.

30. The population of coated nanocrystals of claim 27 , wherein the population of coated nanocrystals exhibit photoluminescence having a quantum yield of greater than about 30%.