High-frequency power amplifier
View Patent ↗The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitor 21 is connected at one end to an upstream stage bias circuit 107 via a bonding wire B 1 , and grounded at the other end. Also, a chip inductor 22 is connected to a base electrode of a high-frequency signal amplification HBT 101 via a bonding wire B 2 . In the high-frequency power amplifier of the present invention, the chip capacitor 21 causes noise generated within the upstream stage bias circuit 107 to flow to the ground, thereby reducing noise in the reception band. Also, the chip inductor 22 reduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.
1. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
a high-frequency signal amplification transistor for amplifying the high-frequency signal;
a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
an inductor connected between the high-frequency signal amplification transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the inductor and grounded at another end,
wherein the bias circuit includes:
a current supply transistor for supplying current to the high-frequency signal amplification transistor; and
a temperature compensation circuit for temperature-compensating the high-frequency signal amplification transistor,
the high-frequency power amplifier further comprising a resistor connected between the high-frequency signal amplification transistor and the inductor.
2. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
a high-frequency signal amplification transistor for amplifying the high-frequency signal;
a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
an inductor connected between the high-frequency signal amplification transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the inductor and grounded at another end,
wherein the bias circuit includes:
a current supply transistor for supplying current to the high-frequency signal amplification transistor; and
a temperature compensation circuit for temperature-compensating the high-frequency signal amplification transistor, wherein
the high-frequency signal amplification transistor and the bias circuit are formed on a semiconductor substrate,
the high-frequency power amplifier further comprising a resistor connected between the high-frequency signal amplification transistor and the inductor.
3. A high-frequency power amplifier according to claim 2 , wherein the inductor and the capacitor each are composed of a chip device.
4. A high-frequency power amplifier according to claim 3 , wherein the current supply transistor has a characteristic different from that of the high-frequency signal amplification transistor.
5. A high-frequency power amplifier according to claim 3 , wherein the current supply transistor has a high frequency gain lower than that of the high-frequency signal amplification transistor.
6. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
a high-frequency signal amplification transistor for amplifying the high-frequency signal;
a bias circuit for supplying current to a base electrode of the high-frequency signal amplification transistor;
an inductor connected between the high-frequency signal amplification transistor and the bias circuit; and
a capacitor connected at one end between the bias circuit and the inductor and grounded at another end,
wherein the bias circuit includes:
a current supply transistor for supplying current to the high-frequency signal amplification transistor; and
a temperature compensation circuit for temperature-compensating the high-frequency signal amplification transistor, wherein
the high-frequency signal amplification transistor and the bias circuit are formed on a semiconductor substrate, and
the inductor is a spiral inductor formed on the semiconductor substrate,
the high-frequency power amplifier further comprising a resistor connected between the high-frequency signal amplification transistor and the spiral inductor.
7. A high-frequency power amplifier for amplifying a high-frequency signal, comprising:
a first transistor for amplifying the high-frequency signal; and
a bias circuit for supplying bias current to a base electrode of the first transistor,
wherein the bias circuit includes:
a second transistor having a characteristic different from that of the first transistor; and
a temperature compensation circuit for temperature-compensating the first transistor, wherein
the second transistor has a high frequency gain lower than that of the first transistor.